Inventor
XU GUOWEI
CN35 patents
⚠️ This page may combine multiple inventors who share the name “XU GUOWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
24 patentsUS10410933B2Sep 10, 2019
Replacement metal gate patterning for nanosheet devices
GLOBALFOUNDRIES INC17 citations86
US10373877B1Aug 6, 2019
Methods of forming source/drain contact structures on integrated circuit products
GLOBALFOUNDRIES INC18 citations85
US10153209B1Dec 11, 2018
Insulating gate separation structure and methods of making same
GLOBALFOUNDRIES INC8 citations83
US10879180B2Dec 29, 2020
FinFET with etch-selective spacer and self-aligned contact capping layer
GLOBALFOUNDRIES INC2 citations73
US10692987B2Jun 23, 2020
IC structure with air gap adjacent to gate structure and methods of forming same
GLOBALFOUNDRIES INC4 citations73
US10068902B1Sep 4, 2018
Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method
GLOBALFOUNDRIES INC4 citations73
US10734233B2Aug 4, 2020
FinFET with high-k spacer and self-aligned contact capping layer
GLOBALFOUNDRIES INC3 citations72
US10580875B2Mar 3, 2020
Middle of line structures
GLOBALFOUNDRIES INC3 citations72
US10872979B2Dec 22, 2020
Spacer structures for a transistor device
GLOBALFOUNDRIES INC1 citations62
US10818659B2Oct 27, 2020
FinFET having upper spacers adjacent gate and source/drain contacts
GLOBALFOUNDRIES INC1 citations62
US10629739B2Apr 21, 2020
Methods of forming spacers adjacent gate structures of a transistor device
GLOBALFOUNDRIES INC1 citations62
US10522538B1Dec 31, 2019
Using source/drain contact cap during gate cut
GLOBALFOUNDRIES INC1 citations61
US10685881B2Jun 16, 2020
Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device
GLOBALFOUNDRIES INC0 citations52
US10636893B2Apr 28, 2020
Replacement metal gate with reduced shorting and uniform chamfering
GLOBALFOUNDRIES INC0 citations52
US10522644B1Dec 31, 2019
Different upper and lower spacers for contact
GLOBALFOUNDRIES INC0 citations52
US10797049B2Oct 6, 2020
FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same
GLOBALFOUNDRIES INC0 citations51
US10431499B2Oct 1, 2019
Insulating gate separation structure
GLOBALFOUNDRIES INC0 citations51
US10658363B2May 19, 2020
Cut inside replacement metal gate trench to mitigate N-P proximity effect
GLOBALFOUNDRIES INC0 citations49
US10446550B2Oct 15, 2019
Cut inside replacement metal gate trench to mitigate N-P proximity effect
GLOBALFOUNDRIES INC0 citations49
US10811409B2Oct 20, 2020
Method of manufacturing FinFET with reduced parasitic capacitance and FinFET structure formed thereby
GLOBALFOUNDRIES INC0 citations42
US10651173B1May 12, 2020
Single diffusion cut for gate structures
GLOBALFOUNDRIES INC0 citations42
US10784143B2Sep 22, 2020
Trench isolation preservation during transistor fabrication
GLOBALFOUNDRIES INC0 citations41
US10636890B2Apr 28, 2020
Chamfered replacement gate structures
GLOBALFOUNDRIES INC0 citations41
US10600876B2Mar 24, 2020
Methods for chamfering work function material layers in gate cavities having varying widths
GLOBALFOUNDRIES INC0 citations39
HUAWEI TECH CO LTD
4 patentsUS11321098B2May 3, 2022
Multi-operating system device, notification device and methods thereof
HUAWEI TECH CO LTD0 citations62
US10534924B2Jan 14, 2020
Software handling device, server system and methods thereof
HUAWEI TECH CO LTD1 citations62
US10878114B2Dec 29, 2020
Software handling device, server system and methods thereof
HUAWEI TECH CO LTD0 citations52
US10628171B2Apr 21, 2020
Multi-operating system device, notification device and methods thereof
HUAWEI TECH CO LTD0 citations52