P

Inventor

XU GUOWEI

CN35 patents
⚠️ This page may combine multiple inventors who share the name “XU GUOWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

24 patents
US10410933B2Sep 10, 2019

Replacement metal gate patterning for nanosheet devices

GLOBALFOUNDRIES INC17 citations86
US10373877B1Aug 6, 2019

Methods of forming source/drain contact structures on integrated circuit products

GLOBALFOUNDRIES INC18 citations85
US10153209B1Dec 11, 2018

Insulating gate separation structure and methods of making same

GLOBALFOUNDRIES INC8 citations83
US10879180B2Dec 29, 2020

FinFET with etch-selective spacer and self-aligned contact capping layer

GLOBALFOUNDRIES INC2 citations73
US10692987B2Jun 23, 2020

IC structure with air gap adjacent to gate structure and methods of forming same

GLOBALFOUNDRIES INC4 citations73
US10068902B1Sep 4, 2018

Integrated circuit structure incorporating non-planar field effect transistors with different channel region heights and method

GLOBALFOUNDRIES INC4 citations73
US10734233B2Aug 4, 2020

FinFET with high-k spacer and self-aligned contact capping layer

GLOBALFOUNDRIES INC3 citations72
US10580875B2Mar 3, 2020

Middle of line structures

GLOBALFOUNDRIES INC3 citations72
US10872979B2Dec 22, 2020

Spacer structures for a transistor device

GLOBALFOUNDRIES INC1 citations62
US10818659B2Oct 27, 2020

FinFET having upper spacers adjacent gate and source/drain contacts

GLOBALFOUNDRIES INC1 citations62
US10629739B2Apr 21, 2020

Methods of forming spacers adjacent gate structures of a transistor device

GLOBALFOUNDRIES INC1 citations62
US10522538B1Dec 31, 2019

Using source/drain contact cap during gate cut

GLOBALFOUNDRIES INC1 citations61
US10685881B2Jun 16, 2020

Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a semiconductor device

GLOBALFOUNDRIES INC0 citations52
US10636893B2Apr 28, 2020

Replacement metal gate with reduced shorting and uniform chamfering

GLOBALFOUNDRIES INC0 citations52
US10522644B1Dec 31, 2019

Different upper and lower spacers for contact

GLOBALFOUNDRIES INC0 citations52
US10797049B2Oct 6, 2020

FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same

GLOBALFOUNDRIES INC0 citations51
US10431499B2Oct 1, 2019

Insulating gate separation structure

GLOBALFOUNDRIES INC0 citations51
US10658363B2May 19, 2020

Cut inside replacement metal gate trench to mitigate N-P proximity effect

GLOBALFOUNDRIES INC0 citations49
US10446550B2Oct 15, 2019

Cut inside replacement metal gate trench to mitigate N-P proximity effect

GLOBALFOUNDRIES INC0 citations49
US10811409B2Oct 20, 2020

Method of manufacturing FinFET with reduced parasitic capacitance and FinFET structure formed thereby

GLOBALFOUNDRIES INC0 citations42
US10651173B1May 12, 2020

Single diffusion cut for gate structures

GLOBALFOUNDRIES INC0 citations42
US10784143B2Sep 22, 2020

Trench isolation preservation during transistor fabrication

GLOBALFOUNDRIES INC0 citations41
US10636890B2Apr 28, 2020

Chamfered replacement gate structures

GLOBALFOUNDRIES INC0 citations41
US10600876B2Mar 24, 2020

Methods for chamfering work function material layers in gate cavities having varying widths

GLOBALFOUNDRIES INC0 citations39

HUAWEI TECH CO LTD

4 patents

GLOBALFOUNDRIES US INC

2 patents

XU GUOWEI

1 patent

UNIV KANSAS

1 patent

THE THIRD CONSTRUCTION CO LTD OF CHINA CONSTRUCTION THIRD ENGNEERING BUREAU

1 patent

SHENZHEN YUANFEI TECH CO LTD

1 patent

LIU XINGXIE

1 patent