Inventor
TAK YOUNG-JO
KR36 patents
⚠️ This page may combine multiple inventors who share the name “TAK YOUNG-JO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS8871544B2Oct 28, 2014
Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US10483433B2Nov 19, 2019
Ultraviolet light emitting devices
SAMSUNG ELECTRONICS CO LTD3 citations73
US9947530B2Apr 17, 2018
Method of manufacturing nitride semiconductor substrate
SAMSUNG ELECTRONICS CO LTD2 citations73
US9666754B2May 30, 2017
Method of manufacturing semiconductor substrate and substrate for semiconductor growth
SAMSUNG ELECTRONICS CO LTD3 citations73
US11075250B2Jul 27, 2021
Light-emitting device package, display device including the same, and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10784405B2Sep 22, 2020
Semiconductor light emitting device
SAMSUNG ELECTRONICS CO LTD2 citations72
US9899565B2Feb 20, 2018
Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrate
SAMSUNG ELECTRONICS CO LTD2 citations72
US9583340B2Feb 28, 2017
Semipolar nitride semiconductor structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US8946773B2Feb 3, 2015
Multi-layer semiconductor buffer structure, semiconductor device and method of manufacturing the semiconductor device using the multi-layer semiconductor buffer structure
SAMSUNG ELECTRONICS CO LTD5 citations72
US12295195B2May 6, 2025
Light emitting device package with reliably formed switching unit
SAMSUNG ELECTRONICS CO LTD0 citations62
US11569417B2Jan 31, 2023
Method of manufacturing semiconductor light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11217623B2Jan 4, 2022
Light emitting device package
SAMSUNG ELECTRONICS CO LTD0 citations62
US10600645B2Mar 24, 2020
Manufacturing method of gallium nitride substrate
SAMSUNG ELECTRONICS CO LTD1 citations62
US9202878B2Dec 1, 2015
Gallium nitride based semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9190270B2Nov 17, 2015
Low-defect semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US8703512B2Apr 22, 2014
Light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US10900142B2Jan 26, 2021
Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate
SAMSUNG ELECTRONICS CO LTD0 citations52
US10094045B2Oct 9, 2018
Method of manufacturing a gallium nitride substrate
SAMSUNG ELECTRONICS CO LTD0 citations52
US9449817B2Sep 20, 2016
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8877652B2Nov 4, 2014
Substrate structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US10964846B2Mar 30, 2021
Semiconductor light emitting device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10741737B2Aug 11, 2020
Light emitting device package
SAMSUNG ELECTRONICS CO LTD0 citations41
KIM JUN-YOUN
5 patentsUS9337381B2May 10, 2016
Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure
KIM JUN-YOUN10 citations83
US8716749B2May 6, 2014
Substrate structures and methods of manufacturing the same
KIM JUN-YOUN6 citations72
US8957432B2Feb 17, 2015
Semiconductor device
KIM JUN-YOUN1 citations52
US8643059B2Feb 4, 2014
Substrate structure and method of manufacturing the same
KIM JUN-YOUN0 citations51
US8541771B2Sep 24, 2013
Semiconductor device and method of manufacturing the same
KIM JUN-YOUN1 citations51
LEE JAE-WON
3 patentsTAK YOUNG-JO
3 patentsUS8952419B2Feb 10, 2015
Semiconductor devices and methods of manufacturing the same
TAK YOUNG-JO6 citations83
US9136430B2Sep 15, 2015
Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure
TAK YOUNG-JO6 citations71
US8138510B2Mar 20, 2012
Gallium nitride light emitting devices and methods of manufacturing the same
TAK YOUNG-JO6 citations71