Inventor

GUNJISHIMA ITARU

JP10 patents

⚠️ This page may combine multiple inventors who share the name “GUNJISHIMA ITARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOYOTA CHUO KENKYUSHO KK

3 patents

US9048102B2Jun 2, 2015

SiC single crystal, SiC wafer, and semiconductor device

TOYOTA CHUO KENKYUSHO KK2 citations61

US10125435B2Nov 13, 2018

SiC single crystal, SiC wafer, SiC substrate, and SiC device

TOYOTA CHUO KENKYUSHO KK0 citations51

US9534317B2Jan 3, 2017

Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal

TOYOTA CHUO KENKYUSHO KK0 citations37

URAKAMI YASUSHI

3 patents

US8936682B2Jan 20, 2015

Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects

URAKAMI YASUSHI3 citations58

US9145622B2Sep 29, 2015

Manufacturing method of silicon carbide single crystal

URAKAMI YASUSHI0 citations37

US9051663B2Jun 9, 2015

Manufacturing method of silicon carbide single crystal

URAKAMI YASUSHI0 citations37

GUNJISHIMA ITARU

2 patents

US9166008B2Oct 20, 2015

SiC single crystal, SiC wafer, and semiconductor device

GUNJISHIMA ITARU2 citations56

US9096947B2Aug 4, 2015

SiC single crystal, production method therefor, SiC wafer and semiconductor device

GUNJISHIMA ITARU0 citations35

DENSO CORP

1 patent

US7135074B2Nov 14, 2006

Method for manufacturing silicon carbide single crystal from dislocation control seed crystal

DENSO CORP19 citations83

SHOWA DENKO KK

1 patent

US10236338B2Mar 19, 2019

SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production method

SHOWA DENKO KK1 citations59