Inventor
CHANG MAN
KR16 patents
⚠️ This page may combine multiple inventors who share the name “CHANG MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
5 patentsUS9514813B2Dec 6, 2016
Resistive memory device, resistive memory system, and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US9728252B2Aug 8, 2017
Resistive memory device with temperature compensation, resistive memory system, and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US9633727B2Apr 25, 2017
Resistive memory devices and methods of controlling resistive memory devices according to selected pulse power specifications
SAMSUNG ELECTRONICS CO LTD0 citations52
US9153778B2Oct 6, 2015
Resistive switching devices and memory devices including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US9257485B2Feb 9, 2016
Memory device and apparatus including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
CHANG MAN
5 patentsUS8947905B2Feb 3, 2015
Nonvolatile memory devices and methods of driving the same
CHANG MAN7 citations83
US8861253B2Oct 14, 2014
Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device
CHANG MAN10 citations83
US8773888B2Jul 8, 2014
Method of operating semiconductor device including variable resistance device
CHANG MAN7 citations83
US9001551B2Apr 7, 2015
Semiconductor devices including variable resistance elements and methods of operating semiconductor devices
CHANG MAN2 citations62
US8611131B2Dec 17, 2013
Variable resistance device, semiconductor device including the variable resistance device, and method of operating the semiconductor device
CHANG MAN4 citations61