Inventor

CHO YOUN-JOUNG

KR41 patents

⚠️ This page may combine multiple inventors who share the name “CHO YOUN-JOUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHO YOUN-JOUNG

SAMSUNG ELECTRONICS CO LTD

Integrated circuit device

Method of fabricating a semiconductor device

Method of manufacturing semiconductor device including nickel-containing film

Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Method of forming thin film using a heterostructured nickel compound

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

Method for manufacturing a capacitor for semiconductor devices

Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

Methods of forming thin film and fabricating integrated circuit device using niobium compound

Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same

Method of forming tin-containing material film and method of synthesizing a tin compound

Aluminum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Organic aluminum precursor and method of forming a metal wire using the same

Organic aluminum precursor and method of manufacturing a metal wiring using the same

Semiconductor device and method for fabricating thereof

Integrated circuit device

Semiconductor device and method for fabricating thereof

Method of fabricating semiconductor device

β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

Method of fabricating semiconductor device including organic and silicon oxide layers

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Method of forming semiconductor device using metal-containing hardmask to pattern photoresist having protected polymer

Atomic layer etching method and semiconductor device manufacturing method using the same

Method of forming oxide layer and method of fabricating semiconductor device

Method of forming a thin film

Tantalum compound

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

Organometallic precursors and methods of forming thin layers using the same

Nickel compound and method of forming thin film using the nickel compound

Methods of forming a pattern and methods of manufacturing a semiconductor device using the same

Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same

β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

Semiconductor device manufacturing method

Organometallic precursors, methods of forming a layer using the same and methods of manufacturing semiconductor devices using the same

Semiconductor device manufacturing method

Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same

Copper electroplating solution and copper electroplating apparatus

CHO YOUN-JOUNG

Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same

Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor

CHUNG WON WOONG

Method for forming dielectric film and method for fabricating semiconductor device