Inventor
CHOI JUNG-SIK
KR54 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JUNG-SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
31 patentsUS6479405B2Nov 12, 2002
Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
SAMSUNG ELECTRONICS CO LTD75 citations94
US7053005B2May 30, 2006
Method of forming a silicon oxide layer in a semiconductor manufacturing process
SAMSUNG ELECTRONICS CO LTD25 citations93
US7270886B2Sep 18, 2007
Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
SAMSUNG ELECTRONICS CO LTD34 citations92
US6706646B1Mar 16, 2004
Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
SAMSUNG ELECTRONICS CO LTD40 citations92
US7605094B2Oct 20, 2009
Method of forming metal oxide using an atomic layer deposition process
SAMSUNG ELECTRONICS CO LTD8 citations84
US7179537B2Feb 20, 2007
Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US9812329B2Nov 7, 2017
Method of fabricating a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations82
US10230367B2Mar 12, 2019
Electronic device and method of determining touch in electronic device
SAMSUNG ELECTRONICS CO LTD3 citations73
US7427573B2Sep 23, 2008
Forming composite metal oxide layer with hafnium oxide and titanium oxide
SAMSUNG ELECTRONICS CO LTD6 citations73
US9437452B2Sep 6, 2016
Method of forming a fine pattern by using block copolymers
SAMSUNG ELECTRONICS CO LTD4 citations71
US9076701B2Jul 7, 2015
Wafer supporting structure, intermediate structure of a semiconductor package including the wafer supporting structure
SAMSUNG ELECTRONICS CO LTD4 citations70
US10049882B1Aug 14, 2018
Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD
SAMSUNG ELECTRONICS CO LTD6 citations69
US7648854B2Jan 19, 2010
Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7250379B2Jul 31, 2007
Method of forming metal oxide using an atomic layer deposition process
SAMSUNG ELECTRONICS CO LTD5 citations63
US7517815B2Apr 14, 2009
Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition
SAMSUNG ELECTRONICS CO LTD3 citations62
US7488684B2Feb 10, 2009
Organic aluminum precursor and method of forming a metal wire using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7452569B2Nov 18, 2008
Organic aluminum precursor and method of manufacturing a metal wiring using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9359382B2Jun 7, 2016
β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same
SAMSUNG ELECTRONICS CO LTD2 citations61
US10185654B2Jan 22, 2019
Memory mapping management method for nonvolatile main memory system
SAMSUNG ELECTRONICS CO LTD1 citations59
US10719263B2Jul 21, 2020
Method of handling page fault in nonvolatile main memory system
SAMSUNG ELECTRONICS CO LTD1 citations57
US9577317B2Feb 21, 2017
Heat radiation antenna device, portable terminal and battery cover therewith, and method for manufacturing the battery cover
SAMSUNG ELECTRONICS CO LTD1 citations52
US7642200B2Jan 5, 2010
Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7582573B2Sep 1, 2009
Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9425059B2Aug 23, 2016
Methods of forming a pattern and methods of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US9840785B2Dec 12, 2017
Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution
SAMSUNG ELECTRONICS CO LTD0 citations50
US9472345B2Oct 18, 2016
Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same
SAMSUNG ELECTRONICS CO LTD1 citations50
US9359383B2Jun 7, 2016
β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US9501424B2Nov 22, 2016
Memory mapping method of nonvolatile memory system and system for providing the memory mapping method
SAMSUNG ELECTRONICS CO LTD0 citations49
US9899231B2Feb 20, 2018
Hard mask composition for spin-coating
SAMSUNG ELECTRONICS CO LTD1 citations48
US9627205B2Apr 18, 2017
Method of manufacturing a semiconductor device using purified block copolymers and semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations48
US9562299B2Feb 7, 2017
Copper electroplating solution and copper electroplating apparatus
SAMSUNG ELECTRONICS CO LTD0 citations45
CHEIL IND INC
3 patentsUS7851789B2Dec 14, 2010
Photosensitive resin composition for pad protective layer, and method for making image sensor using the same
CHEIL IND INC12 citations82
US7700007B2Apr 20, 2010
Anisotropic conductive film forming composition
CHEIL IND INC2 citations60
US7879259B2Feb 1, 2011
Anisotropic conductive film composition
CHEIL IND INC3 citations58
SK HYNIX INC
3 patentsUS11217326B2Jan 4, 2022
Semiconductor memory device, a controller, and operating methods of the semiconductor memory device and the controller
SK HYNIX INC2 citations73
US11461046B2Oct 4, 2022
Memory system with memory controller managing an accumulated erase count value and an open block erase count value and method of operating the same
SK HYNIX INC0 citations60
US11848054B2Dec 19, 2023
Memory device determining precharge time based on a number of times that a program voltage is applied to word line and operating method of memory device
SK HYNIX INC0 citations52
HYUNDAI MOTOR CO LTD
2 patentsKIM YUN-JEONG
1 patentLEE CHANG-MIN
1 patentLEE JUNG-HO
1 patentCHO YOUN-JOUNG
1 patentELECTRONICS & TELECOMMUNICATIONS RES INST
1 patentCHOI JUNG-SIK
1 patentSHINETSU CHEMICAL CO
1 patentBS TECHNICS CO LTD
1 patentSKF SEALING SOLUTIONS KOREA CO LTD
1 patentKIM HYOUN YOUNG
1 patentSEAH NETWORKS CO LTD
1 patentShowing the top 50 of 54 patents by PatentIndex Score.