P

Inventor

CHOI JUNG-SIK

KR54 patents
⚠️ This page may combine multiple inventors who share the name “CHOI JUNG-SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US6479405B2Nov 12, 2002

Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method

SAMSUNG ELECTRONICS CO LTD75 citations94
US7053005B2May 30, 2006

Method of forming a silicon oxide layer in a semiconductor manufacturing process

SAMSUNG ELECTRONICS CO LTD25 citations93
US7270886B2Sep 18, 2007

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

SAMSUNG ELECTRONICS CO LTD34 citations92
US6706646B1Mar 16, 2004

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

SAMSUNG ELECTRONICS CO LTD40 citations92
US7605094B2Oct 20, 2009

Method of forming metal oxide using an atomic layer deposition process

SAMSUNG ELECTRONICS CO LTD8 citations84
US7179537B2Feb 20, 2007

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

SAMSUNG ELECTRONICS CO LTD11 citations84
US9812329B2Nov 7, 2017

Method of fabricating a semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations82
US10230367B2Mar 12, 2019

Electronic device and method of determining touch in electronic device

SAMSUNG ELECTRONICS CO LTD3 citations73
US7427573B2Sep 23, 2008

Forming composite metal oxide layer with hafnium oxide and titanium oxide

SAMSUNG ELECTRONICS CO LTD6 citations73
US9437452B2Sep 6, 2016

Method of forming a fine pattern by using block copolymers

SAMSUNG ELECTRONICS CO LTD4 citations71
US9076701B2Jul 7, 2015

Wafer supporting structure, intermediate structure of a semiconductor package including the wafer supporting structure

SAMSUNG ELECTRONICS CO LTD4 citations70
US10049882B1Aug 14, 2018

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

SAMSUNG ELECTRONICS CO LTD6 citations69
US7648854B2Jan 19, 2010

Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7250379B2Jul 31, 2007

Method of forming metal oxide using an atomic layer deposition process

SAMSUNG ELECTRONICS CO LTD5 citations63
US7517815B2Apr 14, 2009

Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition

SAMSUNG ELECTRONICS CO LTD3 citations62
US7488684B2Feb 10, 2009

Organic aluminum precursor and method of forming a metal wire using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7452569B2Nov 18, 2008

Organic aluminum precursor and method of manufacturing a metal wiring using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US9359382B2Jun 7, 2016

β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

SAMSUNG ELECTRONICS CO LTD2 citations61
US10185654B2Jan 22, 2019

Memory mapping management method for nonvolatile main memory system

SAMSUNG ELECTRONICS CO LTD1 citations59
US10719263B2Jul 21, 2020

Method of handling page fault in nonvolatile main memory system

SAMSUNG ELECTRONICS CO LTD1 citations57
US9577317B2Feb 21, 2017

Heat radiation antenna device, portable terminal and battery cover therewith, and method for manufacturing the battery cover

SAMSUNG ELECTRONICS CO LTD1 citations52
US7642200B2Jan 5, 2010

Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7582573B2Sep 1, 2009

Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9425059B2Aug 23, 2016

Methods of forming a pattern and methods of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD1 citations51
US9840785B2Dec 12, 2017

Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution

SAMSUNG ELECTRONICS CO LTD0 citations50
US9472345B2Oct 18, 2016

Aluminum precursor, method of forming a thin film and method of forming a capacitor using the same

SAMSUNG ELECTRONICS CO LTD1 citations50
US9359383B2Jun 7, 2016

β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US9501424B2Nov 22, 2016

Memory mapping method of nonvolatile memory system and system for providing the memory mapping method

SAMSUNG ELECTRONICS CO LTD0 citations49
US9899231B2Feb 20, 2018

Hard mask composition for spin-coating

SAMSUNG ELECTRONICS CO LTD1 citations48
US9627205B2Apr 18, 2017

Method of manufacturing a semiconductor device using purified block copolymers and semiconductor devices

SAMSUNG ELECTRONICS CO LTD0 citations48
US9562299B2Feb 7, 2017

Copper electroplating solution and copper electroplating apparatus

SAMSUNG ELECTRONICS CO LTD0 citations45

CHEIL IND INC

3 patents

SK HYNIX INC

3 patents

HYUNDAI MOTOR CO LTD

2 patents

KIM YUN-JEONG

1 patent

LEE CHANG-MIN

1 patent

LEE JUNG-HO

1 patent

CHO YOUN-JOUNG

1 patent

ELECTRONICS & TELECOMMUNICATIONS RES INST

1 patent

CHOI JUNG-SIK

1 patent

SHINETSU CHEMICAL CO

1 patent

BS TECHNICS CO LTD

1 patent

SKF SEALING SOLUTIONS KOREA CO LTD

1 patent

KIM HYOUN YOUNG

1 patent

SEAH NETWORKS CO LTD

1 patent

Showing the top 50 of 54 patents by PatentIndex Score.