P

Inventor

CHO KYOO-CHUL

KR19 patents
⚠️ This page may combine multiple inventors who share the name “CHO KYOO-CHUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
US6045610AApr 4, 2000

Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance

SAMSUNG ELECTRONICS CO LTD102 citations97
US5944889AAug 31, 1999

Methods of heat-treating semiconductor wafers

SAMSUNG ELECTRONICS CO LTD63 citations93
US6552337B1Apr 22, 2003

Methods and systems for measuring microroughness of a substrate combining particle counter and atomic force microscope measurements

SAMSUNG ELECTRONICS CO LTD31 citations90
US6724474B1Apr 20, 2004

Wafer surface inspection method

SAMSUNG ELECTRONICS CO LTD17 citations78
US6472040B1Oct 29, 2002

Semi-pure and pure monocrystalline silicon ingots and wafers

SAMSUNG ELECTRONICS CO LTD5 citations73
US7964907B2Jun 21, 2011

Integrated circuit device gate structures

SAMSUNG ELECTRONICS CO LTD5 citations72
US7648854B2Jan 19, 2010

Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7488684B2Feb 10, 2009

Organic aluminum precursor and method of forming a metal wire using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US7452569B2Nov 18, 2008

Organic aluminum precursor and method of manufacturing a metal wiring using the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US6170235B1Jan 9, 2001

Wafer packaging method

SAMSUNG ELECTRONICS CO LTD3 citations62
US9359382B2Jun 7, 2016

β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

SAMSUNG ELECTRONICS CO LTD2 citations61
US7573123B2Aug 11, 2009

Semiconductor device and method for forming the same

SAMSUNG ELECTRONICS CO LTD3 citations61
US7550347B2Jun 23, 2009

Methods of forming integrated circuit device gate structures

SAMSUNG ELECTRONICS CO LTD3 citations61
US7675091B2Mar 9, 2010

Semiconductor wafer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations58
US9359383B2Jun 7, 2016

β-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US7372150B2May 13, 2008

Semiconductor wafer having identification indication

SAMSUNG ELECTRONICS CO LTD1 citations48
US6919214B2Jul 19, 2005

Apparatus for analyzing a substrate employing a copper decoration

SAMSUNG ELECTRONICS CO LTD0 citations46

PARK YOUNG-SOO

1 patent

CHO YOUN-JOUNG

1 patent