Inventor
DEPETRO RICCARDO
IT24 patents
⚠️ This page may combine multiple inventors who share the name “DEPETRO RICCARDO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
17 patentsUS5605851AFeb 25, 1997
Method of forming semiconductor device with a buried junction
ST MICROELECTRONICS SRL27 citations92
US6184716B1Feb 6, 2001
High voltage output stage for driving an electric load
ST MICROELECTRONICS SRL33 citations90
US7417298B2Aug 26, 2008
High voltage insulated-gate transistor
ST MICROELECTRONICS SRL9 citations83
US6194948B1Feb 27, 2001
Method and an auxiliary circuit for preventing the triggering of a parasitic transistor in an output stage of an electronic circuit
ST MICROELECTRONICS SRL16 citations82
US6258701B1Jul 10, 2001
Process for forming insulating structures for integrated circuits
ST MICROELECTRONICS SRL8 citations73
US6236244B1May 22, 2001
High voltage level shifter for driving an output stage
ST MICROELECTRONICS SRL14 citations71
US8035423B2Oct 11, 2011
Driving configuration of a switch
ST MICROELECTRONICS SRL3 citations63
US7924082B2Apr 12, 2011
Driving configuration of a switch
ST MICROELECTRONICS SRL3 citations63
US6587326B2Jul 1, 2003
High-Q, variable capacitance capacitor
ST MICROELECTRONICS SRL4 citations62
US6580146B2Jun 17, 2003
Inductive structure integrated on a semiconductor substrate
ST MICROELECTRONICS SRL2 citations62
US7572703B2Aug 11, 2009
Method for manufacturing a vertical-gate MOS transistor with countersunk trench-gate
ST MICROELECTRONICS SRL2 citations61
US10236378B2Mar 19, 2019
Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process
ST MICROELECTRONICS SRL1 citations59
US7635896B2Dec 22, 2009
SOI device with contact trenches formed during epitaxial growing
ST MICROELECTRONICS SRL5 citations58
US6906389B2Jun 14, 2005
High-voltage, high-cutoff-frequency electronic MOS device
ST MICROELECTRONICS SRL2 citations58
US9385049B2Jul 5, 2016
Process for manufacturing integrated device incorporating low-voltage components and power components
ST MICROELECTRONICS SRL0 citations51
US10535767B2Jan 14, 2020
Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process
ST MICROELECTRONICS SRL0 citations48
US7605015B2Oct 20, 2009
Process for the singulation of integrated devices in thin semiconductor chips
ST MICROELECTRONICS SRL1 citations48
SGS THOMSON MICROELECTRONICS
4 patentsUS5852314ADec 22, 1998
Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground
SGS THOMSON MICROELECTRONICS71 citations95
US5777366AJul 7, 1998
Integrated device with a structure for protection against high electric fields
SGS THOMSON MICROELECTRONICS21 citations92
US6043532AMar 28, 2000
DMOS transistor protected against "snap-back"
SGS THOMSON MICROELECTRONICS16 citations83
US5912495AJun 15, 1999
High voltage driver circuit with diode
SGS THOMSON MICROELECTRONICS18 citations83