Inventor
WONG CHUN YU
US23 patents
⚠️ This page may combine multiple inventors who share the name “WONG CHUN YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
17 patentsUS10475791B1Nov 12, 2019
Transistor fins with different thickness gate dielectric
GLOBALFOUNDRIES INC12 citations84
US10418285B1Sep 17, 2019
Fin field-effect transistor (FinFET) and method of production thereof
GLOBALFOUNDRIES INC8 citations84
US9508795B2Nov 29, 2016
Methods of fabricating nanowire structures
GLOBALFOUNDRIES INC5 citations73
US10804199B2Oct 13, 2020
Self-aligned chamferless interconnect structures of semiconductor devices
GLOBALFOUNDRIES INC4 citations69
US9761481B2Sep 12, 2017
Integrated circuits and methods of forming the same with metal layer connection to through-semiconductor via
GLOBALFOUNDRIES INC2 citations65
US10510662B2Dec 17, 2019
Vertically oriented metal silicide containing e-fuse device and methods of making same
GLOBALFOUNDRIES INC1 citations62
US10468481B2Nov 5, 2019
Self-aligned single diffusion break isolation with reduction of strain loss
GLOBALFOUNDRIES INC1 citations62
US10439026B2Oct 8, 2019
Fins with single diffusion break facet improvement using epitaxial insulator
GLOBALFOUNDRIES INC1 citations62
US9455188B2Sep 27, 2016
Through silicon via device having low stress, thin film gaps and methods for forming the same
GLOBALFOUNDRIES INC2 citations61
US9245790B2Jan 26, 2016
Integrated circuits and methods of forming the same with multiple embedded interconnect connection to same through-semiconductor via
GLOBALFOUNDRIES INC2 citations60
US10879171B2Dec 29, 2020
Vertically oriented metal silicide containing e-fuse device
GLOBALFOUNDRIES INC0 citations52
US10332834B2Jun 25, 2019
Semiconductor fuses with nanowire fuse links and fabrication methods thereof
GLOBALFOUNDRIES INC0 citations52
US9601428B2Mar 21, 2017
Semiconductor fuses with nanowire fuse links and fabrication methods thereof
GLOBALFOUNDRIES INC1 citations52
US10910276B1Feb 2, 2021
STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method
GLOBALFOUNDRIES INC0 citations51
US10636894B2Apr 28, 2020
Fin-type transistors with spacers on the gates
GLOBALFOUNDRIES INC0 citations51
US10043764B2Aug 7, 2018
Through silicon via device having low stress, thin film gaps and methods for forming the same
GLOBALFOUNDRIES INC0 citations51
US10461029B2Oct 29, 2019
Hybrid material electrically programmable fuse and methods of forming
GLOBALFOUNDRIES INC0 citations42