P

Inventor

WONG CHUN YU

US23 patents
⚠️ This page may combine multiple inventors who share the name “WONG CHUN YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

17 patents
US10475791B1Nov 12, 2019

Transistor fins with different thickness gate dielectric

GLOBALFOUNDRIES INC12 citations84
US10418285B1Sep 17, 2019

Fin field-effect transistor (FinFET) and method of production thereof

GLOBALFOUNDRIES INC8 citations84
US9508795B2Nov 29, 2016

Methods of fabricating nanowire structures

GLOBALFOUNDRIES INC5 citations73
US10804199B2Oct 13, 2020

Self-aligned chamferless interconnect structures of semiconductor devices

GLOBALFOUNDRIES INC4 citations69
US9761481B2Sep 12, 2017

Integrated circuits and methods of forming the same with metal layer connection to through-semiconductor via

GLOBALFOUNDRIES INC2 citations65
US10510662B2Dec 17, 2019

Vertically oriented metal silicide containing e-fuse device and methods of making same

GLOBALFOUNDRIES INC1 citations62
US10468481B2Nov 5, 2019

Self-aligned single diffusion break isolation with reduction of strain loss

GLOBALFOUNDRIES INC1 citations62
US10439026B2Oct 8, 2019

Fins with single diffusion break facet improvement using epitaxial insulator

GLOBALFOUNDRIES INC1 citations62
US9455188B2Sep 27, 2016

Through silicon via device having low stress, thin film gaps and methods for forming the same

GLOBALFOUNDRIES INC2 citations61
US9245790B2Jan 26, 2016

Integrated circuits and methods of forming the same with multiple embedded interconnect connection to same through-semiconductor via

GLOBALFOUNDRIES INC2 citations60
US10879171B2Dec 29, 2020

Vertically oriented metal silicide containing e-fuse device

GLOBALFOUNDRIES INC0 citations52
US10332834B2Jun 25, 2019

Semiconductor fuses with nanowire fuse links and fabrication methods thereof

GLOBALFOUNDRIES INC0 citations52
US9601428B2Mar 21, 2017

Semiconductor fuses with nanowire fuse links and fabrication methods thereof

GLOBALFOUNDRIES INC1 citations52
US10910276B1Feb 2, 2021

STI structure with liner along lower portion of longitudinal sides of active region, and related FET and method

GLOBALFOUNDRIES INC0 citations51
US10636894B2Apr 28, 2020

Fin-type transistors with spacers on the gates

GLOBALFOUNDRIES INC0 citations51
US10043764B2Aug 7, 2018

Through silicon via device having low stress, thin film gaps and methods for forming the same

GLOBALFOUNDRIES INC0 citations51
US10461029B2Oct 29, 2019

Hybrid material electrically programmable fuse and methods of forming

GLOBALFOUNDRIES INC0 citations42

MICROSOFT CORP

2 patents

GLOBALFOUNDRIES US INC

2 patents

PROCTER & GAMBLE

1 patent

WONG CHUN YU

1 patent