Inventor
TING JYH-KANG
TW26 patents
⚠️ This page may combine multiple inventors who share the name “TING JYH-KANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS9984191B2May 29, 2018
Cell layout and structure
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US9551923B2Jan 24, 2017
Cut mask design layers to provide compact cell height
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations82
US9047437B2Jun 2, 2015
Method, system and software for accessing design rules and library of design features while designing semiconductor device layout
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations82
US9508791B2Nov 29, 2016
Semiconductor device having a metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US11281835B2Mar 22, 2022
Cell layout and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998304B2May 4, 2021
Conductive line patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10283495B2May 7, 2019
Mask optimization for multi-layer contacts
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269785B2Apr 23, 2019
Conductive line patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9472501B2Oct 18, 2016
Conductive line patterning
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10664639B2May 26, 2020
Cell layout and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9746783B2Aug 29, 2017
Method for preventing photoresist corner rounding effects
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9637818B2May 2, 2017
Implant region definition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9620420B2Apr 11, 2017
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
TAIWAN SEMICONDUCTOR MFG
12 patentsUS5804488ASep 8, 1998
Method of forming a tungsten silicide capacitor having a high breakdown voltage
TAIWAN SEMICONDUCTOR MFG73 citations95
US5480828AJan 2, 1996
Differential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS process
TAIWAN SEMICONDUCTOR MFG103 citations94
US5838032ANov 17, 1998
Precision capacitor array
TAIWAN SEMICONDUCTOR MFG17 citations92
US5635421AJun 3, 1997
Method of making a precision capacitor array
TAIWAN SEMICONDUCTOR MFG32 citations92
US5554558ASep 10, 1996
Method of making high precision w-polycide-to-poly capacitors in digital/analog process
TAIWAN SEMICONDUCTOR MFG25 citations92
US9136168B2Sep 15, 2015
Conductive line patterning
TAIWAN SEMICONDUCTOR MFG5 citations84
US6169314B1Jan 2, 2001
Layout pattern for improved MOS device matching
TAIWAN SEMICONDUCTOR MFG8 citations74
US5952698ASep 14, 1999
Layout pattern for improved MOS device matching
TAIWAN SEMICONDUCTOR MFG13 citations74
US9349634B2May 24, 2016
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG2 citations61
US9391056B2Jul 12, 2016
Mask optimization for multi-layer contacts
TAIWAN SEMICONDUCTOR MFG0 citations52
US9087773B2Jul 21, 2015
Implant region definition
TAIWAN SEMICONDUCTOR MFG0 citations51
US8806417B1Aug 12, 2014
Rule coverage rate auto-extraction and rule number auto-mark
TAIWAN SEMICONDUCTOR MFG1 citations48