Inventor

KIM HYUN-JO

KR42 patents

⚠️ This page may combine multiple inventors who share the name “KIM HYUN-JO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM HYUN-JO

SAMSUNG ELECTRONICS CO LTD

Resistive memory devices including selected reference memory cells

Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Semiconductor device having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Resistive memory devices including selected reference memory cells

Magnetic tunnel junction and memory device including the same

Magnetic tunnel junction structures and methods of fabrication

Resistive memory devices including selected reference memory cells operating responsive to read operations

Resistive memory devices including selected reference memory cells operating responsive to read operations

Method of writing to MRAM devices

Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same

Methods of fabricating semiconductor devices

Semiconductor device

Moisture blocking structure and/or a guard ring, a semiconductor device including the same, and a method of manufacturing the same

Memory device using a transistor and one resistant element for storage

Method of manufacturing semiconductor devices

Magnetic random access memory device and method of forming the same

Electrostatic discharge protection devices

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Integrated circuit devices and methods of manufacturing the same

Semiconductor devices having 3D channels, and methods of fabricating semiconductor devices having 3D channels

Semiconductor device

Magnetic memory device

Magnetic memory device and method of fabricating the same

Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof

Magnetic tunnel junction structures and methods of fabrication

Magnetic random access memory device and method of forming the same

Electrostatic discharge protection devices

Integrated circuit (IC) device

Integrated circuit (IC) device

Integrated circuit (IC) device

Semiconductor device

Semiconductor devices including gate structures with oxygen capturing films

Magnetic memory device and method of fabricating the same

Memory device having a transistor and one resistant element as a storing means and method for driving the memory device

Integrated circuit (IC) device

Pumping capacitor

CHUNG JAE-YUP

Integrated circuit devices and methods of manufacturing the same

CHUNG JAE YUP

Integrated circuit device and method of manufacturing the same

KANG DAE LIM

Electrostatic discharge protection devices

SAMSUNG HEAVY IND

Semi-submersible maritime structure