Inventor

TSENG YUAN-TAI

TW73 patents

⚠️ This page may combine multiple inventors who share the name “TSENG YUAN-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSENG YUAN-TAI

TAIWAN SEMICONDUCTOR MFG CO LTD

Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls

Semiconductor structure and method of manufacturing the same

3D RRAM cell structure for reducing forming and set voltages

Method for forming inductor structure with magnetic material

RRAM cell structure with conductive etch-stop layer

Leakage resistant RRAM/MIM structure

Asymmetric formation approach for a floating gate of a split gate flash memory structure

Structure with emedded EFS3 and FinFET device

Inductor structure with magnetic material

Inductor structure with magnetic material

Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls

Sidewall spacer structure for memory cell

RRAM cell structure with conductive etch-stop layer

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Sidewall spacer structure for memory cell

Method of forming memory cell

Semiconductor structure and method of forming the same

Semiconductor structure and method of manufacturing the same

Semiconductor memory structure with magnetic tunnel junction (MTJ) cell

Semiconductor memory structure with magnetic tunnel junction (MTJ) cell

Method and apparatus for high voltate transistors

Deep trench isolation structure for image sensors

Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusion

Structure and method to reduce polysilicon loss from flash memory devices during replacement gate (RPG) process in integrated circuits

Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure

Dual control gate spacer structure for embedded flash memory

Memory gate first approach to forming a split gate flash memory cell device

Semiconductor structure and method for forming the same

Sidewall protection of memory cell

Memory device for reducing thermal crosstalk

Memory device for reducing thermal crosstalk

Semiconductor structure

Integrated circuit having a resistor layer partially overlapping endcaps

Semiconductor structure

Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls

Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls

RRAM cell structure with conductive etch-stop layer

Leakage resistant RRAM/MIM structure

Semiconductor structure and method of forming the same

Leakage resistant RRAM/MIM structure

Methods of manufacturing a thin film resistor with ends overlapped by interconnect pads

Inductor structure with magnetic material

Split gate flash memory structure with a damage free select gate and a method of making the split gate flash memory structure

Embedded nonvolatile memory

Method of forming memory cell

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Memory device having via landing protection

Sidewall spacer structure for memory cell

Phase change memory device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG

Wafer edge protection structure