Inventor

LIU SHIH-CHANG

TW301 patents

⚠️ This page may combine multiple inventors who share the name “LIU SHIH-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIU SHIH-CHANG

TAIWAN SEMICONDUCTOR MFG CO LTD

Techniques for MRAM MTJ top electrode connection

MRAM device and fabrication method

RRAM device

Resistive random-access memory (RRAM) cell with recessed bottom electrode sidewalls

Semiconductor structure having magnetic tunneling junction (MTJ) layer

Memory cell structure for improving erase speed

Resistive random access memory structure

Self-aligned magnetoresistive random-access memory (MRAM) structure for process damage minimization

RRAM device

Self-aligned split gate flash memory

RRAM cell with bottom electrode

Semiconductor structure, electrode structure and method of forming the same

Si recess method in HKMG replacement gate technology

RRAM cell with bottom electrode

Semiconductor structure and method of manufacturing the same

Cell boundary structure for embedded memory

Reversed stack MTJ

Semiconductor memory device and method for fabricating the same

Semiconductor device and method of forming the same

Metal-insulator-metal (MIM) capacitor structure and method for forming the same

Semiconductor device and method of forming the same

Cell boundary structure for embedded memory

Techniques for MRAM MTJ top electrode connection

Cell boundary structure for embedded memory

Reversed stack MTJ

Semiconductor structure and manufacturing method of the same

Storage device with composite spacer and method for manufacturing the same

Resistance variable memory structure and method of forming the same

Memory cell having resistance variable film and method of making the same

Semiconductor structure and method of manufacturing the same

RRAM cell structure with conductive etch-stop layer

Si recess method in HKMG replacement gate technology

Side bottom contact RRAM structure

MRAM structure for process damage minimization

Memory cell having resistance variable film and method of making the same

Storage device with composite spacer and method for manufacturing the same

Leakage resistant RRAM/MIM structure

Capacitor structure and method of manufacturing the same

Asymmetric formation approach for a floating gate of a split gate flash memory structure

Magnetoresistive random access memory cell and fabricating the same

HK embodied flash memory and methods of forming the same

Split gate flash memory structure and method of making the split gate flash memory structure

Reversed stack MTJ

Structure with emedded EFS3 and FinFET device

TAIWAN SEMICONDUCTOR MFG

RRAM structure and process using composite spacer

Resistance variable memory structure and method of forming the same

Floating gate with unique profile by means of undercutting for split-gate flash memory device

INT POWER DEVICES INC

Multi-deck power converter module

Multi-deck power converter module

HSU HUNG-WEN

Sidewall for backside illuminated image sensor metal grid and method of manufacturing same