P

Inventor

ABEL PAUL

US19 patents
⚠️ This page may combine multiple inventors who share the name “ABEL PAUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

15 patents
US10982335B2Apr 20, 2021

Wet atomic layer etching using self-limiting and solubility-limited reactions

TOKYO ELECTRON LTD10 citations84
US11802342B2Oct 31, 2023

Methods for wet atomic layer etching of ruthenium

TOKYO ELECTRON LTD6 citations73
US12444606B2Oct 14, 2025

Methods for forming vertically layered ionic liquid crystal (ILC) structures on a semiconductor substrate

TOKYO ELECTRON LTD2 citations72
US11437250B2Sep 6, 2022

Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions

TOKYO ELECTRON LTD2 citations72
US12037517B2Jul 16, 2024

Ruthenium CMP chemistry based on halogenation

TOKYO ELECTRON LTD0 citations61
US11820919B2Nov 21, 2023

Ruthenium CMP chemistry based on halogenation

TOKYO ELECTRON LTD0 citations61
US12237166B2Feb 25, 2025

Methods for selective removal of surface oxides on metal films

TOKYO ELECTRON LTD0 citations56
US12494375B2Dec 9, 2025

Method to selectively etch silicon nitride to silicon oxide using surface alkylation

TOKYO ELECTRON LTD0 citations51
US12444610B2Oct 14, 2025

Methods for etching a substrate using a hybrid wet atomic layer etching process

TOKYO ELECTRON LTD0 citations51
US12276033B2Apr 15, 2025

Methods for wet etching of noble metals

TOKYO ELECTRON LTD0 citations51
US12243752B2Mar 4, 2025

Systems for etching a substrate using a hybrid wet atomic layer etching process

TOKYO ELECTRON LTD0 citations51
US11915941B2Feb 27, 2024

Dynamically adjusted purge timing in wet atomic layer etching

TOKYO ELECTRON LTD0 citations50
US10867815B2Dec 15, 2020

Photonically tuned etchant reactivity for wet etching

TOKYO ELECTRON LTD0 citations49
US11866831B2Jan 9, 2024

Methods for wet atomic layer etching of copper

TOKYO ELECTRON LTD0 citations47
US12463050B2Nov 4, 2025

Methods for wet atomic layer etching of molybdenum

TOKYO ELECTRON LTD0 citations40

POLYSIUS AG

2 patents

LEVANT POWER CORP

1 patent

MULLINS CHARLES BUDDIE

1 patent