Inventor
SONG YALI
CN33 patents
Patents
33 patentsUS10950623B2Mar 16, 2021
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD9 citations86
US10957408B1Mar 23, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD6 citations84
US10998049B1May 4, 2021
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD6 citations83
US10991438B1Apr 27, 2021
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD7 citations82
US11430811B2Aug 30, 2022
3D NAND memory device with select gate cut
YANGTZE MEMORY TECH CO LTD1 citations73
US11404441B2Aug 2, 2022
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD2 citations73
US11276467B2Mar 15, 2022
Method of programming memory device and related memory device having a channel-stacked structure
YANGTZE MEMORY TECH CO LTD2 citations73
US10943665B1Mar 9, 2021
Method of programming and verifying memory device and related memory device
YANGTZE MEMORY TECH CO LTD2 citations73
US11710529B2Jul 25, 2023
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations72
US10885990B1Jan 5, 2021
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD3 citations72
US11062782B2Jul 13, 2021
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations71
US10957409B1Mar 23, 2021
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD3 citations71
US10892023B2Jan 12, 2021
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD2 citations71
US12262539B2Mar 25, 2025
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US12237025B2Feb 25, 2025
Memory device, memory system, and program operation method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US12176043B2Dec 24, 2024
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US11875862B2Jan 16, 2024
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11825656B2Nov 21, 2023
3D NAND memory device and method of forming the same
YANGTZE MEMORY TECH CO LTD0 citations62
US11721403B2Aug 8, 2023
Method of programming and verifying memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11594288B2Feb 28, 2023
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11568941B2Jan 31, 2023
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11423995B2Aug 23, 2022
Three-dimensional memory device programming with reduced disturbance
YANGTZE MEMORY TECH CO LTD0 citations62
US11257545B2Feb 22, 2022
Method of programming memory device and related memory device
YANGTZE MEMORY TECH CO LTD0 citations62
US11205494B2Dec 21, 2021
Non-volatile memory device and control method
YANGTZE MEMORY TECH CO LTD0 citations62
US11195590B2Dec 7, 2021
Memory including a plurality of portions and used for reducing program disturbance and program method thereof
YANGTZE MEMORY TECH CO LTD0 citations62
US11848058B2Dec 19, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11626170B2Apr 11, 2023
Method and memory used for reducing program disturbance by adjusting voltage of dummy word line
YANGTZE MEMORY TECH CO LTD0 citations61
US11398284B2Jul 26, 2022
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD0 citations61
US12354668B2Jul 8, 2025
Programming method for semiconductor device and semiconductor device
YANGTZE MEMORY TECH CO LTD0 citations51
US12260096B2Mar 25, 2025
Method of reducing Vpass disturb in 3D nand systems
YANGTZE MEMORY TECH CO LTD0 citations51
US11670373B2Jun 6, 2023
Three-dimensional memory device programming with reduced threshold voltage shift
YANGTZE MEMORY TECH CO LTD0 citations51
US12165716B2Dec 10, 2024
Method of performing programming operation and related memory device
YANGTZE MEMORY TECH CO LTD0 citations50
US11864379B2Jan 2, 2024
Three-dimensional memory and control method thereof
YANGTZE MEMORY TECH CO LTD0 citations49