Inventor
HARADA KATSUYOSHI
JP42 patents
⚠️ This page may combine multiple inventors who share the name “HARADA KATSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOKUSAI ELECTRIC CORP
15 patentsUS10770287B2Sep 8, 2020
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP6 citations84
US11817314B2Nov 14, 2023
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP1 citations73
US11164741B2Nov 2, 2021
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP1 citations73
US11527402B2Dec 13, 2022
Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device
KOKUSAI ELECTRIC CORP4 citations71
US12288684B2Apr 29, 2025
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations62
US12009201B2Jun 11, 2024
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations62
US11664217B2May 30, 2023
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations62
US11056337B2Jul 6, 2021
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations62
US10930491B2Feb 23, 2021
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations62
US11978623B2May 7, 2024
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations61
US10604842B2Mar 31, 2020
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP1 citations61
US12424437B2Sep 23, 2025
Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations60
US11961733B2Apr 16, 2024
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP1 citations60
US12334336B2Jun 17, 2025
Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
KOKUSAI ELECTRIC CORP0 citations52
US12288683B2Apr 29, 2025
Method of manufacturing semiconductor device, substrate processing method, non-transitory computer-readable recording medium and substrate processing apparatus
KOKUSAI ELECTRIC CORP0 citations51
HITACHI INT ELECTRIC INC
15 patentsUS9443718B2Sep 13, 2016
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC11 citations84
US9190298B2Nov 17, 2015
Film forming method and recording medium for performing the method
HITACHI INT ELECTRIC INC5 citations84
US9620357B2Apr 11, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC8 citations83
US10490400B2Nov 26, 2019
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC4 citations73
US10340134B2Jul 2, 2019
Semiconductor device manufacturing method, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC5 citations73
US10607833B2Mar 31, 2020
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC2 citations72
US9741555B2Aug 22, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9691606B2Jun 27, 2017
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations52
US9607827B2Mar 28, 2017
Method of manufacturing semiconductor device, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9520282B2Dec 13, 2016
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9472397B2Oct 18, 2016
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations52
US9460914B2Oct 4, 2016
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
HITACHI INT ELECTRIC INC0 citations52
US9431240B2Aug 30, 2016
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC1 citations52
US9881789B2Jan 30, 2018
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC1 citations51
US10290492B2May 14, 2019
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations50
TOAGOSEI CO LTD
5 patentsUS5985229ANov 16, 1999
Solid silica derivative and process for producing the same
TOAGOSEI CO LTD33 citations92
US7005532B2Feb 28, 2006
Process of producing alkoxysilanes
TOAGOSEI CO LTD3 citations62
US6664224B2Dec 16, 2003
Quaternary ammonium salt and process for the preparation thereof
TOAGOSEI CO LTD4 citations57
US7488693B2Feb 10, 2009
Method for producing silicon oxide film
TOAGOSEI CO LTD0 citations52
US5556999ASep 17, 1996
Alkoxysilane composition inhibited from disproportionation reaction
TOAGOSEI CO LTD1 citations51
TOA GOSEI CHEM IND
3 patentsUS5362897ANov 8, 1994
Process for producing trialkoxysilanes
TOA GOSEI CHEM IND34 citations92
US5260471ANov 9, 1993
Process for producing trialkoxysilane
TOA GOSEI CHEM IND10 citations74
US5221412AJun 22, 1993
Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film
TOA GOSEI CHEM IND16 citations67