P

Inventor

JOE SUNG-MIN

KR15 patents
⚠️ This page may combine multiple inventors who share the name “JOE SUNG-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

13 patents
US11238933B2Feb 1, 2022

Non-volatile memory device including a verify circuit to control word and bit line voltages and method of operating the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US11217311B2Jan 4, 2022

Memory device with improved program performance and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10714184B2Jul 14, 2020

Memory device with improved program performance and method of operating the same

SAMSUNG ELECTRONICS CO LTD6 citations72
US11605432B2Mar 14, 2023

Nonvolatile memory device including a verify circuit to control word and bit line voltages and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations71
US10796766B2Oct 6, 2020

Nonvolatile memory device and a method of programming the nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD2 citations69
US10614886B2Apr 7, 2020

Nonvolatile memory device and a method of programming the nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations69
US12387791B2Aug 12, 2025

Memory device with improved program performance and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12159675B2Dec 3, 2024

Nonvolatile memory device including a logic circuit to control word line voltages

SAMSUNG ELECTRONICS CO LTD0 citations61
US12046287B2Jul 23, 2024

Memory device with improved program performance and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11869594B2Jan 9, 2024

Nonvolatile memory device including a logic circuit to control word and bitline voltages

SAMSUNG ELECTRONICS CO LTD0 citations61
US11600331B2Mar 7, 2023

Memory device with improved program performance and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11152074B2Oct 19, 2021

Memory device with improved program performance and method of operating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US12476188B2Nov 18, 2025

Memory device including asymmetric ground selection lines

SAMSUNG ELECTRONICS CO LTD0 citations50

SNU R&DB FOUNDATION

2 patents