Inventor
TENG CLARENCE
US3 patents
Patents
3 patentsUS4538343ASep 3, 1985
Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
TEXAS INSTRUMENTS INC27 citations91
US4978634ADec 18, 1990
Method of making trench DRAM cell with stacked capacitor and buried lateral contact
TEXAS INSTRUMENTS INC33 citations89
US5111259AMay 5, 1992
Trench capacitor memory cell with curved capacitors
TEXAS INSTRUMENTS INC27 citations88