Inventor

JUN HWICHAN

US21 patents

⚠️ This page may combine multiple inventors who share the name “JUN HWICHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUN HWICHAN

SAMSUNG ELECTRONICS CO LTD

Crossing multi-stack nanosheet structure and method of manufacturing the same

Static random access memory of 3D stacked devices

Integrated circuit device with gate line crossing fin-type active region

Stacked semiconductor device having mirror-symmetric pattern

Semiconductor device having stepped multi-stack transistor structure

Integrated circuit device

Semiconductor device having silicides and methods of manufacturing the same

Semiconductor device with field effect transistors and method of fabricating the same

Crossing multi-stack nanosheet structure and method of manufacturing the same

Stacked semiconductor device having mirror-symmetric pattern

SRAM memory cell for stacked transistors with different channel width

Semiconductor device having stepped multi-stack transistor structure

Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistors

Array of multi-stack nanosheet structures

Semiconductor device having silicides and methods of manufacturing the same

Semiconductor device

Semiconductor device

Semiconductor device including self-aligned gate structure and method of manufacturing the same

Semiconductor device

PARK SUNGIL

Semiconductor devices including contact patterns having a rising portion and a recessed portion

PARK SUEHYE

Semiconductor device and method of fabricating the same