Inventor
HWANG INCHAN
US29 patents
Patents
29 patentsUS11670677B2Jun 6, 2023
Crossing multi-stack nanosheet structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations85
US11538814B2Dec 27, 2022
Static random access memory of 3D stacked devices
SAMSUNG ELECTRONICS CO LTD7 citations85
US10043800B2Aug 7, 2018
Integrated circuit device with gate line crossing fin-type active region
SAMSUNG ELECTRONICS CO LTD10 citations83
US11735585B2Aug 22, 2023
Stacked semiconductor device having mirror-symmetric pattern
SAMSUNG ELECTRONICS CO LTD2 citations73
US11664433B2May 30, 2023
Integrated circuit devices including stacked transistors
SAMSUNG ELECTRONICS CO LTD2 citations73
US11502167B2Nov 15, 2022
Semiconductor device having stepped multi-stack transistor structure
SAMSUNG ELECTRONICS CO LTD4 citations73
US12356665B2Jul 8, 2025
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
SAMSUNG ELECTRONICS CO LTD2 citations72
US10522537B2Dec 31, 2019
Integrated circuit device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10115806B2Oct 30, 2018
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US11177362B2Nov 16, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10964791B2Mar 30, 2021
Semiconductor device having silicides and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US12464818B2Nov 4, 2025
Three-dimensional semiconductor device having vertical misalignment
SAMSUNG ELECTRONICS CO LTD0 citations62
US12317582B2May 27, 2025
Integrated circuit devices including a metal resistor and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12087815B2Sep 10, 2024
Crossing multi-stack nanosheet structure and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US12057448B2Aug 6, 2024
Stacked semiconductor device having mirror-symmetric pattern
SAMSUNG ELECTRONICS CO LTD0 citations62
US12040327B2Jul 16, 2024
Three-dimensional semiconductor device having vertical misalignment
SAMSUNG ELECTRONICS CO LTD1 citations62
US11968818B2Apr 23, 2024
SRAM memory cell for stacked transistors with different channel width
SAMSUNG ELECTRONICS CO LTD0 citations62
US11935922B2Mar 19, 2024
Semiconductor device having stepped multi-stack transistor structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US11742345B2Aug 29, 2023
Method of forming an array of multi-stack nanosheet structures having a dam structure isolating multi-stack transistors
SAMSUNG ELECTRONICS CO LTD0 citations62
US11437369B2Sep 6, 2022
Array of multi-stack nanosheet structures
SAMSUNG ELECTRONICS CO LTD0 citations62
US11735640B2Aug 22, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11538913B2Dec 27, 2022
Semiconductor device having silicides and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12249603B2Mar 11, 2025
Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations60
US12144163B2Nov 12, 2024
Selective double diffusion break structures for multi-stack semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12131996B2Oct 29, 2024
Stacked device with backside power distribution network and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12364018B2Jul 15, 2025
Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device
SAMSUNG ELECTRONICS CO LTD0 citations50
US12200920B2Jan 14, 2025
Integrated circuit devices including a power distribution network and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12463136B2Nov 4, 2025
Integrated circuit devices including backside power rail and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US12588489B2Mar 24, 2026
Integrated circuit devices including stacked elements and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations47