Inventor
OWYANG JON
US2 patents
Patents
2 patentsUS5837598ANov 17, 1998
Diffusion barrier for polysilicon gate electrode of MOS device in integrated circuit structure, and method of making same
LSI LOGIC CORP91 citations94
US6060375AMay 9, 2000
Process for forming re-entrant geometry for gate electrode of integrated circuit structure
LSI LOGIC CORP39 citations90