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Inventor
FREEMAN GREGORY
US
2 patents
Patents
2 patents
US6940149B1
Sep 6, 2005
Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
IBM
64 citations
93
US7709930B2
May 4, 2010
Tuneable semiconductor device with discontinuous portions in the sub-collector
IBM
10 citations
80