Inventor
NESBIT LARRY A
US20 patents
Patents
20 patentsUS5573633ANov 12, 1996
Method of chemically mechanically polishing an electronic component
IBM56 citations96
US4601779AJul 22, 1986
Method of producing a thin silicon-on-insulator layer
IBM123 citations95
US7585614B2Sep 8, 2009
Sub-lithographic imaging techniques and processes
IBM28 citations93
US7187085B2Mar 6, 2007
Semiconductor device including dual damascene interconnections
IBM19 citations92
US6759332B2Jul 6, 2004
Method for producing dual damascene interconnections and structure produced thereby
IBM15 citations92
US6309924B1Oct 30, 2001
Method of forming self-limiting polysilicon LOCOS for DRAM cell
IBM34 citations92
US4558508ADec 17, 1985
Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step
IBM48 citations92
US4532700AAug 6, 1985
Method of manufacturing semiconductor structures having an oxidized porous silicon isolation layer
IBM52 citations92
US7932549B2Apr 26, 2011
Carbon nanotube conductor for trench capacitors
IBM7 citations84
US4398341AAug 16, 1983
Method of fabricating a highly conductive structure
IBM23 citations81
US4389257AJun 21, 1983
Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes
IBM27 citations81
US6998204B2Feb 14, 2006
Alternating phase mask built by additive film deposition
IBM9 citations74
US6686668B2Feb 3, 2004
Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask
IBM8 citations74
US5923991AJul 13, 1999
Methods to prevent divot formation in shallow trench isolation areas
IBM11 citations74
US7393779B2Jul 1, 2008
Shrinking contact apertures through LPD oxide
IBM3 citations63
US7256114B2Aug 14, 2007
Process for oxide cap formation in semiconductor manufacturing
IBM3 citations63
US7250347B2Jul 31, 2007
Double-gate FETs (Field Effect Transistors)
IBM6 citations63
US6875685B1Apr 5, 2005
Method of forming gas dielectric with support structure
IBM5 citations63
US7504314B2Mar 17, 2009
Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom
IBM0 citations52
US6767781B2Jul 27, 2004
Structure and method of forming bitline contacts for a vertical DRAM array using a line bitline contact mask
IBM0 citations50