Inventor

OTA YORITO

JP26 patents

Patents

26 patents

US6110813AAug 29, 2000

Method for forming an ohmic electrode

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD170 citations99

US5510758AApr 23, 1996

Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD269 citations99

US6274889B1Aug 14, 2001

Method for forming ohmic electrode, and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD109 citations98

US5736901AApr 7, 1998

Radio frequency amplifier with stable operation and restrained oscillation at low frequencies

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations92

US5446309AAug 29, 1995

Semiconductor device including a first chip having an active element and a second chip having a passive element

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD50 citations90

US5901042AMay 4, 1999

Compound semiconductor field effect transistor and method for the fabrication thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74

US5147775ASep 15, 1992

Method of fabricating a high-frequency bipolar transistor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations74

US5037769AAug 6, 1991

Method of manufacturing semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74

US4965650AOct 23, 1990

Bipolar transistor and method of producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74

US4746626AMay 24, 1988

Method of manufacturing heterojunction bipolar transistors

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74

US5925903AJul 20, 1999

Field-effect transistors and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations73

US5905277AMay 18, 1999

Field-effect transistor and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations73

US5824575AOct 20, 1998

Semiconductor device and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73

US5585655ADec 17, 1996

Field-effect transistor and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73

US6974751B2Dec 13, 2005

Semiconductor device and method for producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63

US6555900B1Apr 29, 2003

Package, semiconductor device and method for fabricating the semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63

US6417527B1Jul 9, 2002

Diode, method for fabricating the diode, and coplanar waveguide

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62

US6838709B2Jan 4, 2005

Bipolar transistor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations60

US7301181B2Nov 27, 2007

Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations52

US7228110B2Jun 5, 2007

Low cost high frequency device having compact mounting area, high frequency amplification method, wireless communication device and mobile telephone including low cost and high frequency circuit having compact mounting area

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations52

US6710380B2Mar 23, 2004

Diode, method for fabricating the diode, and coplanar waveguide

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD0 citations51

US7081799B2Jul 25, 2006

Bipolar transistor, oscillation circuit, and voltage controlled oscillator

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations50

US6940357B2Sep 6, 2005

Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations50

OTA YORITO

Patents

Method for forming an ohmic electrode

Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps

Method for forming ohmic electrode, and semiconductor device

Radio frequency amplifier with stable operation and restrained oscillation at low frequencies

Semiconductor device including a first chip having an active element and a second chip having a passive element

Package and semiconductor device

Method of producing a bipolar transistor

Semiconductor device and method for producing the same

Compound semiconductor field effect transistor and method for the fabrication thereof

Method of fabricating a high-frequency bipolar transistor

Method of manufacturing semiconductor device

Bipolar transistor and method of producing the same

Method of manufacturing heterojunction bipolar transistors

Field-effect transistors and method of manufacturing the same

Field-effect transistor and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Field-effect transistor and method of manufacturing the same

Semiconductor device and method for producing the same

Package, semiconductor device and method for fabricating the semiconductor device

Diode, method for fabricating the diode, and coplanar waveguide

Bipolar transistor

Heterojunction bipolar transistor having an emitter layer made of a semiconductor material including aluminum

Low cost high frequency device having compact mounting area, high frequency amplification method, wireless communication device and mobile telephone including low cost and high frequency circuit having compact mounting area

Diode, method for fabricating the diode, and coplanar waveguide

Bipolar transistor, oscillation circuit, and voltage controlled oscillator

Bipolar transistor, for voltage controlled oscillator using a capacitance adjustment line