Inventor
LIN YANGSYU
TW63 patents
⚠️ This page may combine multiple inventors who share the name “LIN YANGSYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
48 patentsUS9437281B2Sep 6, 2016
Negative bitline boost scheme for SRAM write-assist
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations92
US9070432B2Jun 30, 2015
Negative bitline boost scheme for SRAM write-assist
TAIWAN SEMICONDUCTOR MFG CO LTD27 citations92
US11199866B2Dec 14, 2021
Voltage regulator with power rail tracking
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10503421B2Dec 10, 2019
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10340897B2Jul 2, 2019
Clock generating circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9305635B2Apr 5, 2016
High density memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11989046B2May 21, 2024
Voltage regulator with power rail tracking
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11913980B2Feb 27, 2024
Power detection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11598794B2Mar 7, 2023
Power detection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11579648B2Feb 14, 2023
Voltage regulator with power rail tracking
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11323101B2May 3, 2022
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11301148B2Apr 12, 2022
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10949100B2Mar 16, 2021
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10951200B2Mar 16, 2021
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10878855B1Dec 29, 2020
Low cell voltage (LCV) memory write assist
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10811085B2Oct 20, 2020
Dual rail device with power detector
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10574213B2Feb 25, 2020
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10163470B2Dec 25, 2018
Dual rail memory, memory macro and associated hybrid power supply method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10141045B2Nov 27, 2018
Dual rail device with power detector for controlling power to first and second power domains
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11776587B2Oct 3, 2023
Power ramping sequence control for a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10553275B2Feb 4, 2020
Device having write assist circuit including memory-adapted transistors and method for making the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10818677B2Oct 27, 2020
Layout of static random access memory periphery circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US11200926B2Dec 14, 2021
Dual rail memory, memory macro and associated hybrid power supply method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11189341B2Nov 30, 2021
Memory device with fly word line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10847210B2Nov 24, 2020
Memory device with fly word line
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12562197B2Feb 24, 2026
Header circuit placement in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12555617B2Feb 17, 2026
Bit line logic circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12346143B2Jul 1, 2025
Voltage regulator with power rail tracking
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12298331B2May 13, 2025
Power detection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183417B2Dec 31, 2024
Memory device and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12094529B2Sep 17, 2024
Was cell for SRAM high-R issue in advanced technology node
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12072750B2Aug 27, 2024
Power management circuit, system-on-chip device, and method of power management
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11996163B2May 28, 2024
Bit line logic circuits and methods
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923034B2Mar 5, 2024
Header circuit placement in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11756608B2Sep 12, 2023
Write assist cell for static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728789B2Aug 15, 2023
Voltage supply selection circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11726539B2Aug 15, 2023
Power management circuit, system-on-chip device, and method of power management
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11675505B2Jun 13, 2023
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11677387B2Jun 13, 2023
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11562779B2Jan 24, 2023
Bit line secondary drive circuit and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11538507B1Dec 27, 2022
Header circuit placement in memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11264066B2Mar 1, 2022
Leakage pathway prevention in a memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10762934B2Sep 1, 2020
Leakage pathway prevention in a memory storage device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12244311B2Mar 4, 2025
Power loss regulation circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12171092B2Dec 17, 2024
Layout of static random access memory periphery circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12119040B2Oct 15, 2024
Memory power control by enable circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11995388B2May 28, 2024
Integrated circuit and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11856747B2Dec 26, 2023
Layout of static random access memory periphery circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
TAIWAN SEMICONDUCTOR MFG
2 patentsShowing the top 50 of 63 patents by PatentIndex Score.