Inventor
SHIOZAWA JUN-ICHI
US5 patents
Patents
5 patentsUS5970352AOct 19, 1999
Field effect transistor having elevated source and drain regions and methods for manufacturing the same
TOSHIBA KK58 citations95
US5888876AMar 30, 1999
Deep trench filling method using silicon film deposition and silicon migration
TOSHIBA KK80 citations95
US6091117AJul 18, 2000
Field effect transistor having elevated source and drain regions and methods of manufacturing the same
TOSHIBA KK20 citations92
US5451809ASep 19, 1995
Smooth surface doped silicon film formation
TOSHIBA KK26 citations91
US6369423B2Apr 9, 2002
Semiconductor device with a thin gate stack having a plurality of insulating layers
TOSHIBA KK9 citations73