P

Inventor

KOMURO TOSHIO

JP25 patents
⚠️ This page may combine multiple inventors who share the name “KOMURO TOSHIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

18 patents
US5353255AOct 4, 1994

Semiconductor dynamic random-access memory device

NEC CORP58 citations96
US6023099AFeb 8, 2000

Semiconductor integrated circuit device with dummy pattern for equalizing thickness of inter-level insulating structure

NEC CORP22 citations92
US5780902AJul 14, 1998

Semiconductor device having LDD structure with pocket on drain side

NEC CORP30 citations92
US5430672AJul 4, 1995

Dynamic random access memory device having one-transistor one-capacitor type memory cells coupled between bit lines paired with each other

NEC CORP23 citations92
US5274598ADec 28, 1993

Semiconductor memory having improved sensing arrangement

NEC CORP56 citations92
US5151616ASep 29, 1992

Cmos high voltage switch

NEC CORP27 citations92
US6204543B1Mar 20, 2001

Semiconductor device having LDD structure and method for producing the same

NEC CORP11 citations74
US6066521AMay 23, 2000

Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor

NEC CORP9 citations74
US5451897ASep 19, 1995

Built-in supply voltage dropping circuit

NEC CORP13 citations74
US5377151ADec 27, 1994

Semiconductor memory device having low-noise sense structure

NEC CORP16 citations74
US5469395ANov 21, 1995

Dynamic random access memory device equipped with diferential amplifier for cell plate line

NEC CORP8 citations73
US6303422B1Oct 16, 2001

Semiconductor memory and manufacturing method thereof

NEC CORP12 citations71
US6084436AJul 4, 2000

Multi-input semiconductor logic device with mask pattern for reduced parasitic capacitance

NEC CORP2 citations63
US5933720AAug 3, 1999

Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor

NEC CORP2 citations63
US5763920AJun 9, 1998

Semiconductor integrated circuit having bipolar and MOS transistors formed on a single semiconductor substrate

NEC CORP2 citations63
US5652154AJul 29, 1997

Method for manufacturing BiMOS device

NEC CORP5 citations63
US5610855AMar 11, 1997

Multi-valued semiconductor memory device

NEC CORP7 citations63
US5008567AApr 16, 1991

Signal generating circuit free from malfunction based on noise

NEC CORP0 citations42

KOMURO TOSHIO

2 patents

NEC ELECTRONICS CORP

2 patents

SONY CORP

2 patents

RENESAS ELECTRONICS CORP

1 patent