Inventor
HUERTAS ROBERT A
US25 patents
⚠️ This page may combine multiple inventors who share the name “HUERTAS ROBERT A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
22 patentsUS6562416B2May 13, 2003
Method of forming low resistance vias
ADVANCED MICRO DEVICES INC57 citations96
US6528432B1Mar 4, 2003
H2-or H2/N2-plasma treatment to prevent organic ILD degradation
ADVANCED MICRO DEVICES INC68 citations96
US6143672ANov 7, 2000
Method of reducing metal voidings in 0.25 μm AL interconnect
ADVANCED MICRO DEVICES INC65 citations96
US6774432B1Aug 10, 2004
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL
ADVANCED MICRO DEVICES INC31 citations92
US6521529B1Feb 18, 2003
HDP treatment for reduced nickel silicide bridging
ADVANCED MICRO DEVICES INC27 citations92
US6482755B1Nov 19, 2002
HDP deposition hillock suppression method in integrated circuits
ADVANCED MICRO DEVICES INC29 citations92
US6383925B1May 7, 2002
Method of improving adhesion of capping layers to cooper interconnects
ADVANCED MICRO DEVICES INC35 citations92
US6383880B1May 7, 2002
NH3/N2-plasma treatment for reduced nickel silicide bridging
ADVANCED MICRO DEVICES INC20 citations92
US6348410B1Feb 19, 2002
Low temperature hillock suppression method in integrated circuit interconnects
ADVANCED MICRO DEVICES INC24 citations92
US6033922AMar 7, 2000
Monitoring wafer temperature during thermal processing of wafers by measuring sheet resistance of a test wafer
ADVANCED MICRO DEVICES INC82 citations92
US5970313AOct 19, 1999
Monitoring wafer temperature during thermal processing of wafers by measuring sheet resistance of a test wafer
ADVANCED MICRO DEVICES INC63 citations92
US6818557B1Nov 16, 2004
Method of forming SiC capped copper interconnects with reduced hillock formation and improved electromigration resistance
ADVANCED MICRO DEVICES INC28 citations90
US6596631B1Jul 22, 2003
Method of forming copper interconnect capping layers with improved interface and adhesion
ADVANCED MICRO DEVICES INC17 citations83
US6809043B1Oct 26, 2004
Multi-stage, low deposition rate PECVD oxide
ADVANCED MICRO DEVICES INC9 citations74
US6686232B1Feb 3, 2004
Ultra low deposition rate PECVD silicon nitride
ADVANCED MICRO DEVICES INC8 citations74
US6661067B1Dec 9, 2003
Nitrogen-plasma treatment for reduced nickel silicide bridging
ADVANCED MICRO DEVICES INC6 citations74
US6221793B1Apr 24, 2001
Process for forming PECVD undoped oxide with a super low deposition rate on a single state deposition
ADVANCED MICRO DEVICES INC7 citations74
US7018896B2Mar 28, 2006
UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing
ADVANCED MICRO DEVICES INC9 citations73
US6489253B1Dec 3, 2002
Method of forming a void-free interlayer dielectric (ILD0) for 0.18-μm flash memory technology and semiconductor device thereby formed
ADVANCED MICRO DEVICES INC6 citations73
US7023046B2Apr 4, 2006
Undoped oxide liner/BPSG for improved data retention
ADVANCED MICRO DEVICES INC3 citations60
US6388330B1May 14, 2002
Low dielectric constant etch stop layers in integrated circuit interconnects
ADVANCED MICRO DEVICES INC2 citations60
US6627973B1Sep 30, 2003
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device
ADVANCED MICRO DEVICES INC0 citations52