Inventor
ELERS KAI-ERIK
FI48 patents
⚠️ This page may combine multiple inventors who share the name “ELERS KAI-ERIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ASM INT
18 patentsUS7494927B2Feb 24, 2009
Method of growing electrical conductors
ASM INT127 citations99
US7241677B2Jul 10, 2007
Process for producing integrated circuits including reduction using gaseous organic compounds
ASM INT119 citations99
US7144809B2Dec 5, 2006
Production of elemental films using a boron-containing reducing agent
ASM INT450 citations99
US6902763B1Jun 7, 2005
Method for depositing nanolaminate thin films on sensitive surfaces
ASM INT191 citations99
US6887795B2May 3, 2005
Method of growing electrical conductors
ASM INT158 citations99
US6821889B2Nov 23, 2004
Production of elemental thin films using a boron-containing reducing agent
ASM INT349 citations99
US6800552B2Oct 5, 2004
Deposition of transition metal carbides
ASM INT91 citations99
US7955979B2Jun 7, 2011
Method of growing electrical conductors
ASM INT88 citations98
US6727169B1Apr 27, 2004
Method of making conformal lining layers for damascene metallization
ASM INT225 citations98
US6820570B2Nov 23, 2004
Atomic layer deposition reactor
ASM INT647 citations96
US6863727B1Mar 8, 2005
Method of depositing transition metal nitride thin films
ASM INT87 citations95
US7018917B2Mar 28, 2006
Multilayer metallization
ASM INT32 citations93
US7749871B2Jul 6, 2010
Method for depositing nanolaminate thin films on sensitive surfaces
ASM INT34 citations92
US7485340B2Feb 3, 2009
Production of elemental films using a boron-containing reducing agent
ASM INT26 citations92
US7329590B2Feb 12, 2008
Method for depositing nanolaminate thin films on sensitive surfaces
ASM INT35 citations92
US7102235B2Sep 5, 2006
Conformal lining layers for damascene metallization
ASM INT17 citations91
US9127351B2Sep 8, 2015
Enhanced thin film deposition
ASM INT1 citations63
US7670944B2Mar 2, 2010
Conformal lining layers for damascene metallization
ASM INT3 citations62
ASM INC
6 patentsUS7727864B2Jun 1, 2010
Controlled composition using plasma-enhanced atomic layer deposition
ASM INC527 citations99
US7611751B2Nov 3, 2009
Vapor deposition of metal carbide films
ASM INC606 citations99
US7608549B2Oct 27, 2009
Method of forming non-conformal layers
ASM INC40 citations91
US7595270B2Sep 29, 2009
Passivated stoichiometric metal nitride films
ASM INC17 citations84
US7598170B2Oct 6, 2009
Plasma-enhanced ALD of tantalum nitride films
ASM INC4 citations63
US7465658B2Dec 16, 2008
Oxygen bridge structures and methods to form oxygen bridge structures
ASM INC0 citations52
ASM MICROCHEMISTRY OY
5 patentsUS6599572B2Jul 29, 2003
Process for growing metalloid thin films utilizing boron-containing reducing agents
ASM MICROCHEMISTRY OY233 citations99
US6482262B1Nov 19, 2002
Deposition of transition metal carbides
ASM MICROCHEMISTRY OY328 citations99
US6482740B2Nov 19, 2002
Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH
ASM MICROCHEMISTRY OY562 citations99
US6475276B1Nov 5, 2002
Production of elemental thin films using a boron-containing reducing agent
ASM MICROCHEMISTRY OY864 citations99
US6759325B2Jul 6, 2004
Sealing porous structures
ASM MICROCHEMISTRY OY169 citations98
ASM INTERNAT NV
4 patentsUS6921712B2Jul 26, 2005
Process for producing integrated circuits including reduction using gaseous organic compounds
ASM INTERNAT NV153 citations99
US6794287B2Sep 21, 2004
Process for growing metal or metal carbide thin films utilizing boron-containing reducing agents
ASM INTERNAT NV81 citations98
US6767582B1Jul 27, 2004
Method of modifying source chemicals in an ald process
ASM INTERNAT NV129 citations98
US6878628B2Apr 12, 2005
In situ reduction of copper oxide prior to silicon carbide deposition
ASM INTERNAT NV159 citations96
ASM INT NV
3 patentsIMEC INTER UNI MICRO ELECTR
2 patentsUS6391785B1May 21, 2002
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
IMEC INTER UNI MICRO ELECTR584 citations98
US6664192B2Dec 16, 2003
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
IMEC INTER UNI MICRO ELECTR77 citations97