Inventor
YU ZHIYI
US25 patents
⚠️ This page may combine multiple inventors who share the name “YU ZHIYI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
16 patentsUS6709989B2Mar 23, 2004
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
MOTOROLA INC686 citations99
US6501121B1Dec 31, 2002
Semiconductor structure
MOTOROLA INC232 citations99
US6291319B1Sep 18, 2001
Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
MOTOROLA INC148 citations99
US6319730B1Nov 20, 2001
Method of fabricating a semiconductor structure including a metal oxide interface
MOTOROLA INC94 citations98
US6022410AFeb 8, 2000
Alkaline-earth metal silicides on silicon
MOTOROLA INC53 citations96
US6432546B1Aug 13, 2002
Microelectronic piezoelectric structure and method of forming the same
MOTOROLA INC43 citations94
US6482538B2Nov 19, 2002
Microelectronic piezoelectric structure and method of forming the same
MOTOROLA INC25 citations92
US6270568B1Aug 7, 2001
Method for fabricating a semiconductor structure with reduced leakage current density
MOTOROLA INC44 citations92
US6241821B1Jun 5, 2001
Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
MOTOROLA INC45 citations92
US6224669B1May 1, 2001
Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
MOTOROLA INC35 citations92
US5945718AAug 31, 1999
Self-aligned metal-oxide-compound semiconductor device and method of fabrication
MOTOROLA INC24 citations88
US6693298B2Feb 17, 2004
Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
MOTOROLA INC16 citations83
US6667196B2Dec 23, 2003
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
MOTOROLA INC16 citations81
US6693033B2Feb 17, 2004
Method of removing an amorphous oxide from a monocrystalline surface
MOTOROLA INC6 citations69
US6479173B1Nov 12, 2002
Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
MOTOROLA INC4 citations58
US6806202B2Oct 19, 2004
Method of removing silicon oxide from a surface of a substrate
MOTOROLA INC1 citations48
FREESCALE SEMICONDUCTOR INC
6 patentsUS7045815B2May 16, 2006
Semiconductor structure exhibiting reduced leakage current and method of fabricating same
FREESCALE SEMICONDUCTOR INC11 citations84
US6885065B2Apr 26, 2005
Ferromagnetic semiconductor structure and method for forming the same
FREESCALE SEMICONDUCTOR INC16 citations84
US7141857B2Nov 28, 2006
Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof
FREESCALE SEMICONDUCTOR INC8 citations69
US7169619B2Jan 30, 2007
Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
FREESCALE SEMICONDUCTOR INC6 citations63
US6852588B1Feb 8, 2005
Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers
FREESCALE SEMICONDUCTOR INC0 citations51
US6750067B2Jun 15, 2004
Microelectronic piezoelectric structure and method of forming the same
FREESCALE SEMICONDUCTOR INC0 citations50
TEXAS INSTRUMENTS INC
3 patentsUS11798979B2Oct 24, 2023
Integrated capacitor with sidewall having reduced roughness
TEXAS INSTRUMENTS INC0 citations57
US11087451B2Aug 10, 2021
Generating multi-focal defect maps using optical tools
TEXAS INSTRUMENTS INC0 citations57
US10978548B2Apr 13, 2021
Integrated capacitor with sidewall having reduced roughness
TEXAS INSTRUMENTS INC0 citations57