P

Inventor

DROOPAD RAVINDRANATH

US38 patents
⚠️ This page may combine multiple inventors who share the name “DROOPAD RAVINDRANATH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOTOROLA INC

23 patents
US6709989B2Mar 23, 2004

Method for fabricating a semiconductor structure including a metal oxide interface with silicon

MOTOROLA INC686 citations99
US6501121B1Dec 31, 2002

Semiconductor structure

MOTOROLA INC232 citations99
US6291319B1Sep 18, 2001

Method for fabricating a semiconductor structure having a stable crystalline interface with silicon

MOTOROLA INC148 citations99
US6673646B2Jan 6, 2004

Growth of compound semiconductor structures on patterned oxide films and process for fabricating same

MOTOROLA INC103 citations98
US6319730B1Nov 20, 2001

Method of fabricating a semiconductor structure including a metal oxide interface

MOTOROLA INC94 citations98
US6493497B1Dec 10, 2002

Electro-optic structure and process for fabricating same

MOTOROLA INC238 citations96
US6392257B1May 21, 2002

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

MOTOROLA INC165 citations96
US6022410AFeb 8, 2000

Alkaline-earth metal silicides on silicon

MOTOROLA INC53 citations96
US6555946B1Apr 29, 2003

Acoustic wave device and process for forming the same

MOTOROLA INC54 citations95
US6432546B1Aug 13, 2002

Microelectronic piezoelectric structure and method of forming the same

MOTOROLA INC43 citations94
US6590236B1Jul 8, 2003

Semiconductor structure for use with high-frequency signals

MOTOROLA INC20 citations92
US6482538B2Nov 19, 2002

Microelectronic piezoelectric structure and method of forming the same

MOTOROLA INC25 citations92
US6270568B1Aug 7, 2001

Method for fabricating a semiconductor structure with reduced leakage current density

MOTOROLA INC44 citations92
US6241821B1Jun 5, 2001

Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

MOTOROLA INC45 citations92
US6224669B1May 1, 2001

Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

MOTOROLA INC35 citations92
US6916717B2Jul 12, 2005

Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate

MOTOROLA INC27 citations91
US6472276B1Oct 29, 2002

Using silicate layers for composite semiconductor

MOTOROLA INC20 citations91
US6159834ADec 12, 2000

Method of forming a gate quality oxide-compound semiconductor structure

MOTOROLA INC20 citations91
US6693298B2Feb 17, 2004

Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same

MOTOROLA INC16 citations83
US6667196B2Dec 23, 2003

Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method

MOTOROLA INC16 citations81
US6693033B2Feb 17, 2004

Method of removing an amorphous oxide from a monocrystalline surface

MOTOROLA INC6 citations69
US6479173B1Nov 12, 2002

Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon

MOTOROLA INC4 citations58
US6806202B2Oct 19, 2004

Method of removing silicon oxide from a surface of a substrate

MOTOROLA INC1 citations48

FREESCALE SEMICONDUCTOR INC

13 patents
US7105866B2Sep 12, 2006

Heterojunction tunneling diodes and process for fabricating same

FREESCALE SEMICONDUCTOR INC24 citations92
US7005717B2Feb 28, 2006

Semiconductor device and method

FREESCALE SEMICONDUCTOR INC41 citations92
US7067856B2Jun 27, 2006

Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same

FREESCALE SEMICONDUCTOR INC26 citations89
US7105886B2Sep 12, 2006

High K dielectric film

FREESCALE SEMICONDUCTOR INC11 citations84
US7045815B2May 16, 2006

Semiconductor structure exhibiting reduced leakage current and method of fabricating same

FREESCALE SEMICONDUCTOR INC11 citations84
US6885065B2Apr 26, 2005

Ferromagnetic semiconductor structure and method for forming the same

FREESCALE SEMICONDUCTOR INC16 citations84
US6890816B2May 10, 2005

Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices

FREESCALE SEMICONDUCTOR INC9 citations74
US7692224B2Apr 6, 2010

MOSFET structure and method of manufacture

FREESCALE SEMICONDUCTOR INC4 citations63
US7442654B2Oct 28, 2008

Method of forming an oxide layer on a compound semiconductor structure

FREESCALE SEMICONDUCTOR INC3 citations63
US7169619B2Jan 30, 2007

Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process

FREESCALE SEMICONDUCTOR INC6 citations63
US7799647B2Sep 21, 2010

MOSFET device featuring a superlattice barrier layer and method

FREESCALE SEMICONDUCTOR INC0 citations51
US6750067B2Jun 15, 2004

Microelectronic piezoelectric structure and method of forming the same

FREESCALE SEMICONDUCTOR INC0 citations50
US7682912B2Mar 23, 2010

III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same

FREESCALE SEMICONDUCTOR INC0 citations41

ABROKWAH JONATHAN K

2 patents