Inventor
DROOPAD RAVINDRANATH
US38 patents
⚠️ This page may combine multiple inventors who share the name “DROOPAD RAVINDRANATH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
23 patentsUS6709989B2Mar 23, 2004
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
MOTOROLA INC686 citations99
US6501121B1Dec 31, 2002
Semiconductor structure
MOTOROLA INC232 citations99
US6291319B1Sep 18, 2001
Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
MOTOROLA INC148 citations99
US6673646B2Jan 6, 2004
Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
MOTOROLA INC103 citations98
US6319730B1Nov 20, 2001
Method of fabricating a semiconductor structure including a metal oxide interface
MOTOROLA INC94 citations98
US6493497B1Dec 10, 2002
Electro-optic structure and process for fabricating same
MOTOROLA INC238 citations96
US6392257B1May 21, 2002
Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
MOTOROLA INC165 citations96
US6022410AFeb 8, 2000
Alkaline-earth metal silicides on silicon
MOTOROLA INC53 citations96
US6555946B1Apr 29, 2003
Acoustic wave device and process for forming the same
MOTOROLA INC54 citations95
US6432546B1Aug 13, 2002
Microelectronic piezoelectric structure and method of forming the same
MOTOROLA INC43 citations94
US6590236B1Jul 8, 2003
Semiconductor structure for use with high-frequency signals
MOTOROLA INC20 citations92
US6482538B2Nov 19, 2002
Microelectronic piezoelectric structure and method of forming the same
MOTOROLA INC25 citations92
US6270568B1Aug 7, 2001
Method for fabricating a semiconductor structure with reduced leakage current density
MOTOROLA INC44 citations92
US6241821B1Jun 5, 2001
Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
MOTOROLA INC45 citations92
US6224669B1May 1, 2001
Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
MOTOROLA INC35 citations92
US6916717B2Jul 12, 2005
Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
MOTOROLA INC27 citations91
US6472276B1Oct 29, 2002
Using silicate layers for composite semiconductor
MOTOROLA INC20 citations91
US6159834ADec 12, 2000
Method of forming a gate quality oxide-compound semiconductor structure
MOTOROLA INC20 citations91
US6693298B2Feb 17, 2004
Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
MOTOROLA INC16 citations83
US6667196B2Dec 23, 2003
Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
MOTOROLA INC16 citations81
US6693033B2Feb 17, 2004
Method of removing an amorphous oxide from a monocrystalline surface
MOTOROLA INC6 citations69
US6479173B1Nov 12, 2002
Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon
MOTOROLA INC4 citations58
US6806202B2Oct 19, 2004
Method of removing silicon oxide from a surface of a substrate
MOTOROLA INC1 citations48
FREESCALE SEMICONDUCTOR INC
13 patentsUS7105866B2Sep 12, 2006
Heterojunction tunneling diodes and process for fabricating same
FREESCALE SEMICONDUCTOR INC24 citations92
US7005717B2Feb 28, 2006
Semiconductor device and method
FREESCALE SEMICONDUCTOR INC41 citations92
US7067856B2Jun 27, 2006
Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
FREESCALE SEMICONDUCTOR INC26 citations89
US7105886B2Sep 12, 2006
High K dielectric film
FREESCALE SEMICONDUCTOR INC11 citations84
US7045815B2May 16, 2006
Semiconductor structure exhibiting reduced leakage current and method of fabricating same
FREESCALE SEMICONDUCTOR INC11 citations84
US6885065B2Apr 26, 2005
Ferromagnetic semiconductor structure and method for forming the same
FREESCALE SEMICONDUCTOR INC16 citations84
US6890816B2May 10, 2005
Compound semiconductor structure including an epitaxial perovskite layer and method for fabricating semiconductor structures and devices
FREESCALE SEMICONDUCTOR INC9 citations74
US7692224B2Apr 6, 2010
MOSFET structure and method of manufacture
FREESCALE SEMICONDUCTOR INC4 citations63
US7442654B2Oct 28, 2008
Method of forming an oxide layer on a compound semiconductor structure
FREESCALE SEMICONDUCTOR INC3 citations63
US7169619B2Jan 30, 2007
Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
FREESCALE SEMICONDUCTOR INC6 citations63
US7799647B2Sep 21, 2010
MOSFET device featuring a superlattice barrier layer and method
FREESCALE SEMICONDUCTOR INC0 citations51
US6750067B2Jun 15, 2004
Microelectronic piezoelectric structure and method of forming the same
FREESCALE SEMICONDUCTOR INC0 citations50
US7682912B2Mar 23, 2010
III-V compound semiconductor device with a surface layer in access regions having charge of polarity opposite to channel charge and method of making the same
FREESCALE SEMICONDUCTOR INC0 citations41