Inventor

JUN HWI CHAN

KR35 patents

⚠️ This page may combine multiple inventors who share the name “JUN HWI CHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUN HWI CHAN

SAMSUNG ELECTRONICS CO LTD

Method for fabricating semiconductor device having a silicide layer

Semiconductor device including contact structure

Method of fabricating semiconductor device having a resistor structure

Semiconductor device having a metal via

Method of forming vertical field-effect transistor devices having gate liner

Semiconductor device including contact structure

Semiconductor devices and methods of manufacturing the same

Semiconductor device having a resistor structure

Semiconductor devices and method of manufacturing the same

Method for manufacturing semiconductor device using gate portion as etch mask

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Integrated circuit device and method of fabricating the same

Semiconductor devices including contact plugs

Semiconductor devices

Semiconductor device having spacer between contract patterns

Vertical field-effect transistor devices having gate liner

Methods of manufacturing semiconductor devices

Method of forming vertical field-effect transistor devices having gate liner

Semiconductor device including contact structure

Semiconductor device

Vertical field effect transistor with self-aligned contact structure and layout

Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the same

Semiconductor devices including contact plugs

Semiconductor devices and method of manufacturing the same

Vertical field effect transistor (VFET) structure with dielectric protection layer and method of manufacturing the same

Semiconductor device and method of fabricating the same

Vertical field-effect transistor (VFET) devices and methods of forming the same

Vertical field effect transistor device having protruded shallow trench isolation and method for manufacturing the same

Integrated circuit device and method of fabricating the same

Semiconductor devices including contact plugs

Semiconductor device having a metal via

JUN HWI-CHAN

Semiconductor device having a gate cutting region and a cross-coupling pattern between gate structures

Methods for fabricating semiconductor devices