Inventor
KIM SEON BAE
KR18 patents
⚠️ This page may combine multiple inventors who share the name “KIM SEON BAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS11837548B2Dec 5, 2023
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations71
US11145757B2Oct 12, 2021
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations71
US12557642B2Feb 17, 2026
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12142652B2Nov 12, 2024
Semiconductor device including a capping pattern
SAMSUNG ELECTRONICS CO LTD1 citations61
US11552182B2Jan 10, 2023
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11107906B2Aug 31, 2021
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US11749678B2Sep 5, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations58
US11404412B2Aug 2, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations58
US12356659B2Jul 8, 2025
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12094940B2Sep 17, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11309405B2Apr 19, 2022
Vertical field effect transistor device having protruded shallow trench isolation and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11271091B2Mar 8, 2022
Fin structure for vertical field effect transistor having two-dimensional shape in plan view
SAMSUNG ELECTRONICS CO LTD0 citations51
US10790368B2Sep 29, 2020
Vertical FET devices including a contact on protruding portions of a substrate
SAMSUNG ELECTRONICS CO LTD0 citations51
US10755932B2Aug 25, 2020
Method of manufacturing integrated circuit device
SAMSUNG ELECTRONICS CO LTD0 citations51
US11735659B2Aug 22, 2023
Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11296210B2Apr 5, 2022
Symmetrical two-dimensional fin structure for vertical field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US8044566B2Oct 25, 2011
Fluorescent mixture for fluorescent lamp, fluorescent lamp, backlight assembly having the same and display device having the same
SAMSUNG ELECTRONICS CO LTD0 citations50