P

Inventor

KIM SEON BAE

KR18 patents
⚠️ This page may combine multiple inventors who share the name “KIM SEON BAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

17 patents
US11837548B2Dec 5, 2023

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US11145757B2Oct 12, 2021

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations71
US12557642B2Feb 17, 2026

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US12142652B2Nov 12, 2024

Semiconductor device including a capping pattern

SAMSUNG ELECTRONICS CO LTD1 citations61
US11552182B2Jan 10, 2023

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11107906B2Aug 31, 2021

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations61
US11749678B2Sep 5, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations58
US11404412B2Aug 2, 2022

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations58
US12356659B2Jul 8, 2025

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12094940B2Sep 17, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US11309405B2Apr 19, 2022

Vertical field effect transistor device having protruded shallow trench isolation and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US11271091B2Mar 8, 2022

Fin structure for vertical field effect transistor having two-dimensional shape in plan view

SAMSUNG ELECTRONICS CO LTD0 citations51
US10790368B2Sep 29, 2020

Vertical FET devices including a contact on protruding portions of a substrate

SAMSUNG ELECTRONICS CO LTD0 citations51
US10755932B2Aug 25, 2020

Method of manufacturing integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations51
US11735659B2Aug 22, 2023

Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US11296210B2Apr 5, 2022

Symmetrical two-dimensional fin structure for vertical field effect transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US8044566B2Oct 25, 2011

Fluorescent mixture for fluorescent lamp, fluorescent lamp, backlight assembly having the same and display device having the same

SAMSUNG ELECTRONICS CO LTD0 citations50

CHO JOO-WOAN

1 patent