P

Inventor

ANDIDEH EBRAHIM

US70 patents
⚠️ This page may combine multiple inventors who share the name “ANDIDEH EBRAHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

48 patents
US6437444B2Aug 20, 2002

Interlayer dielectric with a composite dielectric stack

INTEL CORP530 citations99
US5953635ASep 14, 1999

Interlayer dielectric with a composite dielectric stack

INTEL CORP316 citations99
US6765273B1Jul 20, 2004

Device structure and method for reducing silicide encroachment

INTEL CORP240 citations98
US6624032B2Sep 23, 2003

Structure and process flow for fabrication of dual gate floating body integrated MOS transistors

INTEL CORP85 citations98
US6506692B2Jan 14, 2003

Method of making a semiconductor device using a silicon carbide hard mask

INTEL CORP116 citations98
US5270264ADec 14, 1993

Process for filling submicron spaces with dielectric

INTEL CORP150 citations98
US6235568B1May 22, 2001

Semiconductor device having deposited silicon regions and a method of fabrication

INTEL CORP303 citations97
US6392271B1May 21, 2002

Structure and process flow for fabrication of dual gate floating body integrated MOS transistors

INTEL CORP64 citations96
US6274913B1Aug 14, 2001

Shielded channel transistor structure with embedded source/drain junctions

INTEL CORP62 citations96
US6121100ASep 19, 2000

Method of fabricating a MOS transistor with a raised source/drain extension

INTEL CORP147 citations96
US6777759B1Aug 17, 2004

Device structure and method for reducing silicide encroachment

INTEL CORP58 citations95
US6518155B1Feb 11, 2003

Device structure and method for reducing silicide encroachment

INTEL CORP43 citations95
US6362091B1Mar 26, 2002

Method for making a semiconductor device having a low-k dielectric layer

INTEL CORP68 citations95
US6316063B1Nov 13, 2001

Method for preparing carbon doped oxide insulating layers

INTEL CORP76 citations95
US7034380B2Apr 25, 2006

Low-dielectric constant structure with a multilayer stack of thin films with pores

INTEL CORP24 citations93
US6448185B1Sep 10, 2002

Method for making a semiconductor device that has a dual damascene interconnect

INTEL CORP49 citations93
US6191050B1Feb 20, 2001

Interlayer dielectric with a composite dielectric stack

INTEL CORP25 citations93
US5877072AMar 2, 1999

Process for forming doped regions from solid phase diffusion source

INTEL CORP22 citations93
US7755124B2Jul 13, 2010

Laminating magnetic materials in a semiconductor device

INTEL CORP18 citations92
US6951506B2Oct 4, 2005

Polish pad with non-uniform groove depth to improve wafer polish rate uniformity

INTEL CORP16 citations92
US6914335B2Jul 5, 2005

Semiconductor device having a low-K dielectric layer

INTEL CORP16 citations92
US6846737B1Jan 25, 2005

Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials

INTEL CORP24 citations92
US6380010B2Apr 30, 2002

Shielded channel transistor structure with embedded source/drain junctions

INTEL CORP30 citations92
US6350670B1Feb 26, 2002

Method for making a semiconductor device having a carbon doped oxide insulating layer

INTEL CORP49 citations92
US6093651AJul 25, 2000

Polish pad with non-uniform groove depth to improve wafer polish rate uniformity

INTEL CORP40 citations92
US5672095ASep 30, 1997

Elimination of pad conditioning in a chemical mechanical polishing process

INTEL CORP45 citations92
US6677253B2Jan 13, 2004

Carbon doped oxide deposition

INTEL CORP25 citations91
US6482754B1Nov 19, 2002

Method of forming a carbon doped oxide layer on a substrate

INTEL CORP29 citations91
US6630390B2Oct 7, 2003

Method of forming a semiconductor device using a carbon doped oxide layer to control the chemical mechanical polishing of a dielectric layer

INTEL CORP22 citations89
US6417098B1Jul 9, 2002

Enhanced surface modification of low K carbon-doped oxide

INTEL CORP29 citations89
US7009272B2Mar 7, 2006

PECVD air gap integration

INTEL CORP19 citations84
US7396692B2Jul 8, 2008

Method for increasing ferroelectric characteristics of polymer memory cells

INTEL CORP14 citations82
US6680262B2Jan 20, 2004

Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface

INTEL CORP13 citations82
US7001782B1Feb 21, 2006

Method and apparatus for filling interlayer vias on ferroelectric polymer substrates

INTEL CORP14 citations81
US6951764B2Oct 4, 2005

Ferroelectric memory device with a conductive polymer layer and a method of formation

INTEL CORP8 citations74
US6887780B2May 3, 2005

Concentration graded carbon doped oxide

INTEL CORP8 citations74
US6800548B2Oct 5, 2004

Method to avoid via poisoning in dual damascene process

INTEL CORP9 citations74
US6664168B1Dec 16, 2003

Method of making an on-die decoupling capacitor for a semiconductor device

INTEL CORP12 citations74
US6596646B2Jul 22, 2003

Method for making a sub 100 nanometer semiconductor device using conventional lithography steps

INTEL CORP7 citations74
US6593650B2Jul 15, 2003

Plasma induced depletion of fluorine from surfaces of fluorinated low-k dielectric materials

INTEL CORP5 citations74
US7169620B2Jan 30, 2007

Method of reducing the surface roughness of spin coated polymer films

INTEL CORP4 citations72
US9633837B2Apr 25, 2017

Methods of providing dielectric to conductor adhesion in package structures

INTEL CORP3 citations71
US6548399B1Apr 15, 2003

Method of forming a semiconductor device using a carbon doped oxide layer to control the chemical mechanical polishing of a dielectric layer

INTEL CORP10 citations70
US7595203B2Sep 29, 2009

Ferroelectric memory device with a conductive polymer layer and a method of formation

INTEL CORP3 citations63
US7184289B2Feb 27, 2007

Parallel electrode memory

INTEL CORP3 citations63
US7026670B2Apr 11, 2006

Ferroelectric memory device with a conductive polymer layer and a method of formation

INTEL CORP1 citations63
US6740579B2May 25, 2004

Method of making a semiconductor device that includes a dual damascene interconnect

INTEL CORP5 citations63
US7078161B2Jul 18, 2006

Plasma ashing process for removing photoresist and residues during ferroelectric device fabrication

INTEL CORP3 citations62

TEH WENG HONG

1 patent

QORVO US INC

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.