Inventor

TAKAMIZAWA SHOICHI

JP6 patents

⚠️ This page may combine multiple inventors who share the name “TAKAMIZAWA SHOICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHINETSU HANDOTAI KK

4 patents

US5998283ADec 7, 1999

Silicon wafer having plasma CVD gettering layer with components/composition changing in depth-wise direction and method of manufacturing the silicon wafer

SHINETSU HANDOTAI KK19 citations91

US5993493ANov 30, 1999

Method of manufacturing mirror-polished silicon wafers, and apparatus for processing silicon wafers

SHINETSU HANDOTAI KK7 citations72

US7214271B2May 8, 2007

Silicon single crystal wafer process apparatus, silicon single crystal wafer, and manufacturing method of silicon epitaxial wafer

SHINETSU HANDOTAI KK7 citations71

US5899744AMay 4, 1999

Method of manufacturing semiconductor wafers

SHINETSU HANDOTAI KK12 citations70

SHIN ETSU HANDOTAI LTD

1 patent

US5970365AOct 19, 1999

Silicon wafer including amorphous silicon layer formed by PCVD and method of manufacturing wafer

SHIN ETSU HANDOTAI LTD7 citations71

TAKAMIZAWA SHOICHI

1 patent

US9127376B2Sep 8, 2015

Method for manufacturing nitride semiconductor self-supporting substrate and nitride semiconductor self-supporting substrate

TAKAMIZAWA SHOICHI0 citations33