Inventor
MATHEWS VIJU K
US40 patents
⚠️ This page may combine multiple inventors who share the name “MATHEWS VIJU K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
37 patentsUS5202278AApr 13, 1993
Method of forming a capacitor in semiconductor wafer processing
MICRON TECHNOLOGY INC126 citations98
US6030847AFeb 29, 2000
Method for forming a storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC75 citations96
US5445999AAug 29, 1995
Advanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridation
MICRON TECHNOLOGY INC93 citations96
US5393683AFeb 28, 1995
Method of making semiconductor devices having two-layer gate structure
MICRON TECHNOLOGY INC67 citations94
US5837378ANov 17, 1998
Method of reducing stress-induced defects in silicon
MICRON TECHNOLOGY INC25 citations93
US5798280AAug 25, 1998
Process for doping hemispherical grain silicon
MICRON TECHNOLOGY INC19 citations93
US5756390AMay 26, 1998
Modified LOCOS process for sub-half-micron technology
MICRON TECHNOLOGY INC31 citations93
US5702986ADec 30, 1997
Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges
MICRON TECHNOLOGY INC25 citations93
US5658829AAug 19, 1997
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC33 citations93
US5637514AJun 10, 1997
Method of forming a field effect transistor
MICRON TECHNOLOGY INC40 citations93
US5580821ADec 3, 1996
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC40 citations93
US5259924ANov 9, 1993
Integrated circuit fabrication process to reduce critical dimension loss during etching
MICRON TECHNOLOGY INC27 citations93
US6211078B1Apr 3, 2001
Method of improving resist adhesion for use in patterning conductive layers
MICRON TECHNOLOGY INC36 citations92
US7153707B2Dec 26, 2006
Method for forming a storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC10 citations82
US6791131B1Sep 14, 2004
Method for forming a storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC10 citations82
US7253052B2Aug 7, 2007
Method for forming a storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC8 citations74
US6365490B1Apr 2, 2002
Process to improve the flow of oxide during field oxidation by fluorine doping
MICRON TECHNOLOGY INC5 citations74
US6025236AFeb 15, 2000
Methods of forming field oxide and active area regions on a semiconductive substrate
MICRON TECHNOLOGY INC6 citations74
US5933754AAug 3, 1999
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC13 citations74
US5930647AJul 27, 1999
Methods of forming field oxide and active area regions on a semiconductive substrate
MICRON TECHNOLOGY INC6 citations74
US5902128AMay 11, 1999
Process to improve the flow of oxide during field oxidation by fluorine doping
MICRON TECHNOLOGY INC8 citations74
US5895268AApr 20, 1999
High pressure nitridation of tungsten
MICRON TECHNOLOGY INC10 citations74
US6835634B1Dec 28, 2004
Streamlined field isolation process
MICRON TECHNOLOGY INC3 citations63
US6429525B2Aug 6, 2002
Interconnect structure having improved resist adhesion
MICRON TECHNOLOGY INC2 citations63
US6245671B1Jun 12, 2001
Semiconductor processing method of forming an electrically conductive contact plug
MICRON TECHNOLOGY INC3 citations63
US6245644B1Jun 12, 2001
Methods of forming field oxide and active area regions on a semiconductive substrate
MICRON TECHNOLOGY INC3 citations63
US6156612ADec 5, 2000
Methods of forming field oxide and active area regions on a semiconductive substrate
MICRON TECHNOLOGY INC1 citations63
US5994203ANov 30, 1999
Process for stress reduction in silicon during field isolation
MICRON TECHNOLOGY INC2 citations63
US5940692AAug 17, 1999
Method of forming a field effect transistor
MICRON TECHNOLOGY INC4 citations63
US5897356AApr 27, 1999
Methods of forming field oxide and active area regions on a semiconductive substrate
MICRON TECHNOLOGY INC1 citations63
US5891788AApr 6, 1999
Locus isolation technique using high pressure oxidation (hipox) and protective spacers
MICRON TECHNOLOGY INC6 citations63
US7398595B2Jul 15, 2008
Method for forming a storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC0 citations52
US7393753B2Jul 1, 2008
Method for forming a storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC0 citations52
US7385240B2Jun 10, 2008
Storage cell capacitor compatible with high dielectric constant materials
MICRON TECHNOLOGY INC0 citations52
US6762475B2Jul 13, 2004
Semiconductor wafer isolation structure formed by field oxidation
MICRON TECHNOLOGY INC0 citations52
US6611038B2Aug 26, 2003
Semiconductor wafer isolation structure formed by field oxidation
MICRON TECHNOLOGY INC0 citations52
US6465326B2Oct 15, 2002
Methods of forming field oxide and active area regions on a semiconductor substrate
MICRON TECHNOLOGY INC0 citations52
MICRON SEMICONDUCTOR INC
3 patentsUS5362632ANov 8, 1994
Barrier process for Ta2 O5 capacitor
MICRON SEMICONDUCTOR INC100 citations96
US5278085AJan 11, 1994
Single mask process for forming both n-type and p-type gates in a polycrystalline silicon layer during the formation of a semiconductor device
MICRON SEMICONDUCTOR INC103 citations94
US5393694AFeb 28, 1995
Advanced process for recessed poly buffered locos
MICRON SEMICONDUCTOR INC27 citations92