P

Inventor

MATHEWS VIJU K

US40 patents
⚠️ This page may combine multiple inventors who share the name “MATHEWS VIJU K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

37 patents
US5202278AApr 13, 1993

Method of forming a capacitor in semiconductor wafer processing

MICRON TECHNOLOGY INC126 citations98
US6030847AFeb 29, 2000

Method for forming a storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC75 citations96
US5445999AAug 29, 1995

Advanced technique to improve the bonding arrangement on silicon surfaces to promote uniform nitridation

MICRON TECHNOLOGY INC93 citations96
US5393683AFeb 28, 1995

Method of making semiconductor devices having two-layer gate structure

MICRON TECHNOLOGY INC67 citations94
US5837378ANov 17, 1998

Method of reducing stress-induced defects in silicon

MICRON TECHNOLOGY INC25 citations93
US5798280AAug 25, 1998

Process for doping hemispherical grain silicon

MICRON TECHNOLOGY INC19 citations93
US5756390AMay 26, 1998

Modified LOCOS process for sub-half-micron technology

MICRON TECHNOLOGY INC31 citations93
US5702986ADec 30, 1997

Low-stress method of fabricating field-effect transistors having silicon nitride spacers on gate electrode edges

MICRON TECHNOLOGY INC25 citations93
US5658829AAug 19, 1997

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC33 citations93
US5637514AJun 10, 1997

Method of forming a field effect transistor

MICRON TECHNOLOGY INC40 citations93
US5580821ADec 3, 1996

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC40 citations93
US5259924ANov 9, 1993

Integrated circuit fabrication process to reduce critical dimension loss during etching

MICRON TECHNOLOGY INC27 citations93
US6211078B1Apr 3, 2001

Method of improving resist adhesion for use in patterning conductive layers

MICRON TECHNOLOGY INC36 citations92
US7153707B2Dec 26, 2006

Method for forming a storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC10 citations82
US6791131B1Sep 14, 2004

Method for forming a storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC10 citations82
US7253052B2Aug 7, 2007

Method for forming a storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC8 citations74
US6365490B1Apr 2, 2002

Process to improve the flow of oxide during field oxidation by fluorine doping

MICRON TECHNOLOGY INC5 citations74
US6025236AFeb 15, 2000

Methods of forming field oxide and active area regions on a semiconductive substrate

MICRON TECHNOLOGY INC6 citations74
US5933754AAug 3, 1999

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC13 citations74
US5930647AJul 27, 1999

Methods of forming field oxide and active area regions on a semiconductive substrate

MICRON TECHNOLOGY INC6 citations74
US5902128AMay 11, 1999

Process to improve the flow of oxide during field oxidation by fluorine doping

MICRON TECHNOLOGY INC8 citations74
US5895268AApr 20, 1999

High pressure nitridation of tungsten

MICRON TECHNOLOGY INC10 citations74
US6835634B1Dec 28, 2004

Streamlined field isolation process

MICRON TECHNOLOGY INC3 citations63
US6429525B2Aug 6, 2002

Interconnect structure having improved resist adhesion

MICRON TECHNOLOGY INC2 citations63
US6245671B1Jun 12, 2001

Semiconductor processing method of forming an electrically conductive contact plug

MICRON TECHNOLOGY INC3 citations63
US6245644B1Jun 12, 2001

Methods of forming field oxide and active area regions on a semiconductive substrate

MICRON TECHNOLOGY INC3 citations63
US6156612ADec 5, 2000

Methods of forming field oxide and active area regions on a semiconductive substrate

MICRON TECHNOLOGY INC1 citations63
US5994203ANov 30, 1999

Process for stress reduction in silicon during field isolation

MICRON TECHNOLOGY INC2 citations63
US5940692AAug 17, 1999

Method of forming a field effect transistor

MICRON TECHNOLOGY INC4 citations63
US5897356AApr 27, 1999

Methods of forming field oxide and active area regions on a semiconductive substrate

MICRON TECHNOLOGY INC1 citations63
US5891788AApr 6, 1999

Locus isolation technique using high pressure oxidation (hipox) and protective spacers

MICRON TECHNOLOGY INC6 citations63
US7398595B2Jul 15, 2008

Method for forming a storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC0 citations52
US7393753B2Jul 1, 2008

Method for forming a storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC0 citations52
US7385240B2Jun 10, 2008

Storage cell capacitor compatible with high dielectric constant materials

MICRON TECHNOLOGY INC0 citations52
US6762475B2Jul 13, 2004

Semiconductor wafer isolation structure formed by field oxidation

MICRON TECHNOLOGY INC0 citations52
US6611038B2Aug 26, 2003

Semiconductor wafer isolation structure formed by field oxidation

MICRON TECHNOLOGY INC0 citations52
US6465326B2Oct 15, 2002

Methods of forming field oxide and active area regions on a semiconductor substrate

MICRON TECHNOLOGY INC0 citations52

MICRON SEMICONDUCTOR INC

3 patents