Inventor

SIEMIENIEC RALF

AT139 patents

⚠️ This page may combine multiple inventors who share the name “SIEMIENIEC RALF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SIEMIENIEC RALF

INFINEON TECHNOLOGIES AG

Semiconductor device with a trench electrode

Semiconductor device having a lower diode region arranged below a trench

Method of forming a silicon-carbide device with a shielded gate

Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas

Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas

Semiconductor device having a source electrode contact trench

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

Semiconductor device and transistor cell having a diode region

Semiconductor device with diode region and trench gate structure

SiC trench transistor device and methods of manufacturing thereof

Method for producing a buried N-doped semiconductor zone in a semiconductor body and semiconductor component

Silicon carbide semiconductor component comprising trench gate structures and shielding regions

Silicon carbide semiconductor component

Semiconductor device with diode region

Semiconductor device and transistor cell having a diode region

Semiconductor device with transistor cells and a drift structure and method of manufacturing

Semiconductor device including trench gate structure and buried shielding region and method of manufacturing

INFINEON TECHNOLOGIES AUSTRIA AG

Method of forming compound semiconductor body

Power MOSFET with seperate gate and field plate trenches

Semiconductor device with field electrode structures in a cell area and termination structures in an edge area

Semiconductor chip with integrated series resistances

Avalanche-rugged quasi-vertical HEMT

Semiconductor device with field electrode structures, gate structures and auxiliary diode structures

Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof

Semiconductor device with needle-shaped field plate structures

Method of producing a semiconductor device

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures

Semiconductor device comprising planar gate and trench field electrode structure

Semiconductor device with field electrode structure

Semiconductor device having polysilicon plugs with silicide crystallites

Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures

INFINEON TECHNOLOGIES AUSTRIA

Switch circuit and semiconductor device

Semiconductor device

Semiconductor device with buried gate electrode and gate contacts

Field effect controllable semiconductor component with improved inverse diode and production methods therefor

Method for producing a semiconductor component

Method for producing a buried semiconductor layer

Semiconductor component including compensation zones and discharge structures for the compensation zones

Electronic circuit with a reverse conducting transistor device

Semiconductor device with a reduced band gap and process

HIRLER FRANZ

Semiconductor component having a space saving edge structure

Semiconductor component with a space saving edge structure

Integrated circuit including a trench transistor having two control electrodes

TREU MICHAEL

Semiconductor device including a normally-on transistor and a normally-off transistor

Silicone carbide trench semiconductor device

BLANK OLIVER

Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor

SIEMIENIEC RALF

Semiconductor device

SEDLMAIER STEFAN

Stress-reduced field-effect semiconductor device and method for forming therefor

MAUDER ANTON

Semiconductor device with improved on-resistance