Inventor
AICHINGER THOMAS
AT31 patents
Patents
31 patentsUS9577073B2Feb 21, 2017
Method of forming a silicon-carbide device with a shielded gate
INFINEON TECHNOLOGIES AG19 citations92
US10304953B2May 28, 2019
Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas
INFINEON TECHNOLOGIES AG15 citations86
US10714609B2Jul 14, 2020
Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesas
INFINEON TECHNOLOGIES AG7 citations84
US10074741B2Sep 11, 2018
Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
INFINEON TECHNOLOGIES AG10 citations84
US10211306B2Feb 19, 2019
Semiconductor device with diode region and trench gate structure
INFINEON TECHNOLOGIES AG15 citations83
US10586845B1Mar 10, 2020
SiC trench transistor device and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG9 citations82
US9960243B2May 1, 2018
Semiconductor device with stripe-shaped trench gate structures and gate connector structure
INFINEON TECHNOLOGIES AG3 citations73
US9923066B2Mar 20, 2018
Wide bandgap semiconductor device
INFINEON TECHNOLOGIES AG4 citations73
US10700182B2Jun 30, 2020
Semiconductor device with transistor cells and a drift structure and method of manufacturing
INFINEON TECHNOLOGIES AG2 citations72
US10217636B2Feb 26, 2019
Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
INFINEON TECHNOLOGIES AG2 citations69
US9530850B2Dec 27, 2016
Semiconductor device with stripe-shaped trench gate structures and gate connector structure
INFINEON TECHNOLOGIES AG2 citations63
US11881512B2Jan 23, 2024
Method of manufacturing semiconductor device with silicon carbide body
INFINEON TECHNOLOGIES AG0 citations62
US11626477B2Apr 11, 2023
Silicon carbide field-effect transistor including shielding areas
INFINEON TECHNOLOGIES AG0 citations62
US11342433B2May 24, 2022
Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devices
INFINEON TECHNOLOGIES AG0 citations62
US11195921B2Dec 7, 2021
Semiconductor device with silicon carbide body
INFINEON TECHNOLOGIES AG0 citations62
US11101343B2Aug 24, 2021
Silicon carbide field-effect transistor including shielding areas
INFINEON TECHNOLOGIES AG0 citations62
US10553685B2Feb 4, 2020
SiC semiconductor device with offset in trench bottom
INFINEON TECHNOLOGIES AG1 citations62
US11462611B2Oct 4, 2022
SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG0 citations61
US10896952B2Jan 19, 2021
SiC device and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG0 citations61
US12107128B2Oct 1, 2024
Method of producing a semiconductor device having a ferroelectric gate stack
INFINEON TECHNOLOGIES AG0 citations60
US11791383B2Oct 17, 2023
Semiconductor device having a ferroelectric gate stack
INFINEON TECHNOLOGIES AG0 citations60
US12294018B2May 6, 2025
Vertical power semiconductor device including silicon carbide (sic) semiconductor body
INFINEON TECHNOLOGIES AG0 citations58
US12341012B2Jun 24, 2025
Method for annealing a gate insulation layer on a wide band gap semiconductor substrate
INFINEON TECHNOLOGIES AG0 citations56
US11295951B2Apr 5, 2022
Wide band gap semiconductor device and method for forming a wide band gap semiconductor device
INFINEON TECHNOLOGIES AG0 citations56
US11940489B2Mar 26, 2024
Semiconductor device having an optical device degradation sensor
INFINEON TECHNOLOGIES AG0 citations54
US11417747B2Aug 16, 2022
Transistor device with a varying gate runner resistivity per area
INFINEON TECHNOLOGIES AG0 citations52
US11251269B2Feb 15, 2022
Semiconductor device including trench gate structure and manufacturing method
INFINEON TECHNOLOGIES AG0 citations52
US10734514B2Aug 4, 2020
Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region
INFINEON TECHNOLOGIES AG0 citations52
US9960230B2May 1, 2018
Silicon-carbide transistor device with a shielded gate
INFINEON TECHNOLOGIES AG1 citations52
US10393697B2Aug 27, 2019
Apparatus for analyzing ion kinetics in dielectrics
INFINEON TECHNOLOGIES AG0 citations49
US9934972B2Apr 3, 2018
Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
INFINEON TECHNOLOGIES AG0 citations48