Inventor

SCHULZE HANS-JOACHIM

DE618 patents

⚠️ This page may combine multiple inventors who share the name “SCHULZE HANS-JOACHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHULZE HANS-JOACHIM

INFINEON TECHNOLOGIES AG

Wafer and a method for manufacturing a wafer

Compensation component and method for fabricating the compensation component

Metallization and its use in, in particular, an IGBT or a diode

Semiconductor device and fabrication method suitable therefor

Power IGBT with increased robustness

Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone

IGBT with monolithic integrated antiparallel diode

Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method

Power semiconductor component for high reverse voltages

Semiconductor component with enhanced avalanche ruggedness

Method for forming a semiconductor device and a semiconductor device

Method for splitting semiconductor wafers

Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

Semiconductor device with control structure including buried portions and method of manufacturing

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

Method for forming a semiconductor device and a semiconductor device

Method of operating a semiconductor device having an IGBT and desaturation channel structure

IGBT with reduced feedback capacitance

Super junction semiconductor device

Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturing

Increasing the doping efficiency during proton irradiation

Semiconductor device with IGBT cell and desaturation channel structure

Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structure

Semiconductor device and fabrication method

Semiconductor device and substrate with chalcogen doped region

SCHULZE HANS-JOACHIM

Bipolar semiconductor device and manufacturing method

Bipolar semiconductor device and manufacturing method

SiC semiconductor power device

Semiconductor device including an edge area and method of manufacturing a semiconductor device

Method of manufacturing a semiconductor device including grinding from a back surface and semiconductor device

Method of manufacturing semiconductor devices using ion implantation

Semiconductor device with voltage compensation structure

Power transistor device vertical integration

INFINEON TECHNOLOGIES AUSTRIA

Semiconductor device with a field stop zone

Method for producing an integrated circuit including a semiconductor

Method for fabricating a semiconductor component

Charge compensation semiconductor devices

Semiconductor device with charge compensation structure

Semiconductor component with improved robustness

MAUDER ANTON

Semiconductor device with trench structures including a recombination structure and a fill structure

Power semiconductor device and a method for forming a semiconductor device

Semiconductor device with edge termination structure

SIEMENS AG

Method for removing crystal defects in silicon wafers

Power semiconductor diode

INFINEON TECHNOLOGIES AUSTRIA AG

High voltage transistor operable with a high gate voltage

Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer

EUPEC GMBH & CO KG

Semiconductor component with scattering centers within a lateral resistor region

BERGER RUDOLF

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

PFIRSCH FRANK

Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

HIRLER FRANZ

Super junction semiconductor device comprising a cell area and an edge area