Inventor
MOTOYAMA YASUHIRO
JP20 patents
⚠️ This page may combine multiple inventors who share the name “MOTOYAMA YASUHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
11 patentsUS6696849B2Feb 24, 2004
Fabrication method of semiconductor integrated circuit device and its testing apparatus
RENESAS TECH CORP75 citations97
US7219422B2May 22, 2007
Fabrication method of semiconductor integrated circuit device
RENESAS TECH CORP21 citations91
US7776626B2Aug 17, 2010
Manufacturing method of semiconductor integrated circuit device
RENESAS TECH CORP15 citations84
US7271015B2Sep 18, 2007
Manufacturing method of semiconductor integrated circuit device and probe card
RENESAS TECH CORP12 citations84
US7235413B2Jun 26, 2007
Fabrication method of semiconductor integrated circuit device
RENESAS TECH CORP13 citations83
US7351597B2Apr 1, 2008
Fabrication method of semiconductor integrated circuit device
RENESAS TECH CORP10 citations82
US7688086B2Mar 30, 2010
Fabrication method of semiconductor integrated circuit device and probe card
RENESAS TECH CORP7 citations67
US7598100B2Oct 6, 2009
Manufacturing method of semiconductor integrated circuit device
RENESAS TECH CORP4 citations62
US7407823B2Aug 5, 2008
Manufacturing method of semiconductor integrated circuit device
RENESAS TECH CORP2 citations62
US7517707B2Apr 14, 2009
Manufacturing method of semiconductor integrated circuit device and probe card
RENESAS TECH CORP1 citations52
US7537943B2May 26, 2009
Method of manufacturing a semiconductor integrated circuit device
RENESAS TECH CORP0 citations41
HITACHI LTD
4 patentsUS6566150B2May 20, 2003
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
HITACHI LTD15 citations92
US6455335B1Sep 24, 2002
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
HITACHI LTD17 citations92
US6197603B1Mar 6, 2001
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
HITACHI LTD12 citations82
US7198962B2Apr 3, 2007
Semiconductor device and manufacturing method thereof including a probe test step and a burn-in test step
HITACHI LTD3 citations62
RENESAS ELECTRONICS CORP
2 patentsHASEBE AKIO
2 patentsUS8062911B2Nov 22, 2011
Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same
HASEBE AKIO2 citations59
US8206997B2Jun 26, 2012
Method of manufacturing a semiconductor integrated circuit device and a method of manufacturing a thin film probe sheet for using the same
HASEBE AKIO1 citations49