Inventor

GHYSELEN BRUNO

FR112 patents

⚠️ This page may combine multiple inventors who share the name “GHYSELEN BRUNO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GHYSELEN BRUNO

SOITEC SILICON ON INSULATOR

Methods for fabricating final substrates

Methods for fabricating a substrate

Semiconductor structure and methods for fabricating same

Forming structures that include a relaxed or pseudo-relaxed layer on a substrate

Process for transferring a layer of strained semiconductor material

Method of fabricating substrates, in particular for optics, electronics or optoelectronics

Semiconductor substrates having useful and transfer layers

Semiconductor substrates having useful and transfer layers

Process for transferring a layer of strained semiconductor material

Semiconductor substrates having useful and transfer layers

Semiconductor substrates having useful and transfer layers

Method for forming a relaxed or pseudo-relaxed useful layer on a substrate

Method of fabricating heteroepitaxial microstructures

Method for fabricating a substrate with useful layer on high resistivity support

Methods for fabricating a substrate

Methods for fabricating final substrates

Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material

Methods for making substrates and substrates formed therefrom

Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate

Transfer of a thin layer from a wafer comprising a buffer layer

Wafer with a relaxed useful layer and method of forming the wafer

Methods for transferring a thin layer from a wafer having a buffer layer

Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom

Method for treating substrates for microelectronics and substrates obtained by said method

Methods for making substrates and substrates formed therefrom

Fabrication of substrates with a useful layer of monocrystalline semiconductor material

Forming structures that include a relaxed or pseudo-relaxed layer on a substrate

Method of fabricating heteroepitaxial microstructures

Semiconductor substrates having useful and transfer layers

Multi-gate FET with multi-layer channel

Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material

Methods for transferring a useful layer of silicon carbide to a receiving substrate

Method of fabrication of a substrate for an epitaxial growth

Methods for transferring a useful layer of silicon carbide to a receiving substrate

Method and device for making substrates

Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer

Methods for making substrates and substrates formed therefrom

Process for transferring a layer of strained semiconductor material

Fabrication of substrates with a useful layer of monocrystalline semiconductor material

Methods for preparing a semiconductor assembly

Indirect bonding with disappearance of bonding layer

Substrate assembly for stressed systems

Substrate for stressed systems and method of making same

COMMISSARIAT ENERGIE ATOMIQUE

Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer

Detachable substrate with controlled mechanical strength and method of producing same

Embrittled substrate and method for making same

Method for making thin layers containing microcomponents

Two-stage annealing method for manufacturing semiconductor substrates

Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate

THOMSON CSF

Josephson junction structure