Inventor
RAYSSAC OLIVIER
FR51 patents
⚠️ This page may combine multiple inventors who share the name “RAYSSAC OLIVIER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SOITEC SILICON ON INSULATOR
35 patentsUS6955971B2Oct 18, 2005
Semiconductor structure and methods for fabricating same
SOITEC SILICON ON INSULATOR92 citations98
US7182234B2Feb 27, 2007
Substrate cutting device and method
SOITEC SILICON ON INSULATOR23 citations93
US7122095B2Oct 17, 2006
Methods for forming an assembly for transfer of a useful layer
SOITEC SILICON ON INSULATOR16 citations93
US7839001B2Nov 23, 2010
Methods for making substrates and substrates formed therefrom
SOITEC SILICON ON INSULATOR15 citations92
US7449394B2Nov 11, 2008
Atomic implantation and thermal treatment of a semiconductor layer
SOITEC SILICON ON INSULATOR20 citations92
US7406994B2Aug 5, 2008
Substrate layer cutting device and method
SOITEC SILICON ON INSULATOR17 citations90
US6989314B2Jan 24, 2006
Semiconductor structure and method of making same
SOITEC SILICON ON INSULATOR27 citations88
US7939428B2May 10, 2011
Methods for making substrates and substrates formed therefrom
SOITEC SILICON ON INSULATOR7 citations84
US7888235B2Feb 15, 2011
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
SOITEC SILICON ON INSULATOR7 citations84
US7670929B2Mar 2, 2010
Method for direct bonding two semiconductor substrates
SOITEC SILICON ON INSULATOR12 citations84
US7615468B2Nov 10, 2009
Methods for making substrates and substrates formed therefrom
SOITEC SILICON ON INSULATOR12 citations82
US7189304B2Mar 13, 2007
Substrate layer cutting device and method
SOITEC SILICON ON INSULATOR10 citations82
US7404870B2Jul 29, 2008
Methods for forming an assembly for transfer of a useful layer
SOITEC SILICON ON INSULATOR6 citations74
US7265029B2Sep 4, 2007
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
SOITEC SILICON ON INSULATOR6 citations74
US7256101B2Aug 14, 2007
Methods for preparing a semiconductor assembly
SOITEC SILICON ON INSULATOR9 citations74
US7232738B2Jun 19, 2007
Device and method for cutting an assembly
SOITEC SILICON ON INSULATOR5 citations74
US7078353B2Jul 18, 2006
Indirect bonding with disappearance of bonding layer
SOITEC SILICON ON INSULATOR8 citations74
US7067393B2Jun 27, 2006
Substrate assembly for stressed systems
SOITEC SILICON ON INSULATOR5 citations74
US7009270B2Mar 7, 2006
Substrate for stressed systems and method of making same
SOITEC SILICON ON INSULATOR7 citations74
US7276428B2Oct 2, 2007
Methods for forming a semiconductor structure
SOITEC SILICON ON INSULATOR7 citations73
US6991944B2Jan 31, 2006
Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materials
SOITEC SILICON ON INSULATOR6 citations70
US7615464B2Nov 10, 2009
Transfer method with a treatment of a surface to be bonded
SOITEC SILICON ON INSULATOR2 citations63
US7544586B2Jun 9, 2009
Method of fabricating chips and an associated support
SOITEC SILICON ON INSULATOR3 citations63
US7405135B2Jul 29, 2008
Substrate for stressed systems and method of making same
SOITEC SILICON ON INSULATOR3 citations63
US7279779B2Oct 9, 2007
Substrate assembly for stressed systems
SOITEC SILICON ON INSULATOR4 citations63
US7169683B2Jan 30, 2007
Preventive treatment method for a multilayer semiconductor structure
SOITEC SILICON ON INSULATOR2 citations63
US7163873B2Jan 16, 2007
Substrate for stressed systems and method of making same
SOITEC SILICON ON INSULATOR1 citations63
US7145214B2Dec 5, 2006
Substrate for stressed systems and method of making same
SOITEC SILICON ON INSULATOR2 citations63
US7056809B2Jun 6, 2006
Method for ion treating a semiconductor material for subsequent bonding
SOITEC SILICON ON INSULATOR2 citations63
US7041577B2May 9, 2006
Process for manufacturing a substrate and associated substrate
SOITEC SILICON ON INSULATOR6 citations63
US7439160B2Oct 21, 2008
Methods for producing a semiconductor entity
SOITEC SILICON ON INSULATOR6 citations59
US8012289B2Sep 6, 2011
Method of fabricating a release substrate
SOITEC SILICON ON INSULATOR0 citations52
US7972939B2Jul 5, 2011
Transfer method with a treatment of a surface to be bonded
SOITEC SILICON ON INSULATOR1 citations52
US7892946B2Feb 22, 2011
Device and method for cutting an assembly
SOITEC SILICON ON INSULATOR1 citations52
US7176554B2Feb 13, 2007
Methods for producing a semiconductor entity
SOITEC SILICON ON INSULATOR1 citations48
COMMISSARIAT ENERGIE ATOMIQUE
9 patentsUS6204079B1Mar 20, 2001
Selective transfer of elements from one support to another support
COMMISSARIAT ENERGIE ATOMIQUE120 citations98
US6756285B1Jun 29, 2004
Multilayer structure with controlled internal stresses and making same
COMMISSARIAT ENERGIE ATOMIQUE86 citations95
US7902038B2Mar 8, 2011
Detachable substrate with controlled mechanical strength and method of producing same
COMMISSARIAT ENERGIE ATOMIQUE50 citations94
US7713369B2May 11, 2010
Detachable substrate or detachable structure and method for the production thereof
COMMISSARIAT ENERGIE ATOMIQUE48 citations94
US7498245B2Mar 3, 2009
Embrittled substrate and method for making same
COMMISSARIAT ENERGIE ATOMIQUE25 citations92
US6821376B1Nov 23, 2004
Method for separating two elements and a device therefor
COMMISSARIAT ENERGIE ATOMIQUE50 citations91
US7060590B2Jun 13, 2006
Layer transfer method
COMMISSARIAT ENERGIE ATOMIQUE18 citations82
US6913971B2Jul 5, 2005
Layer transfer methods
COMMISSARIAT ENERGIE ATOMIQUE11 citations71
US7235461B2Jun 26, 2007
Method for bonding semiconductor structures together
COMMISSARIAT ENERGIE ATOMIQUE2 citations60
LETERTRE FABRICE
4 patentsUS8507361B2Aug 13, 2013
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
LETERTRE FABRICE4 citations63
US8093687B2Jan 10, 2012
Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transfer
LETERTRE FABRICE3 citations63
US8252664B2Aug 28, 2012
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
LETERTRE FABRICE1 citations60
US10002763B2Jun 19, 2018
Fabrication of substrates with a useful layer of monocrystalline semiconductor material
LETERTRE FABRICE0 citations52
RAYSSAC OLIVIER
2 patentsShowing the top 50 of 51 patents by PatentIndex Score.