P

Inventor

OHNO YASUO

JP40 patents
⚠️ This page may combine multiple inventors who share the name “OHNO YASUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

17 patents
US6492669B2Dec 10, 2002

Semiconductor device with schottky electrode having high schottky barrier

NEC CORP134 citations98
US6465814B2Oct 15, 2002

Semiconductor device

NEC CORP104 citations98
US6765241B2Jul 20, 2004

Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances

NEC CORP54 citations96
US6552373B2Apr 22, 2003

Hetero-junction field effect transistor having an intermediate layer

NEC CORP65 citations96
US6373082B1Apr 16, 2002

Compound semiconductor field effect transistor

NEC CORP69 citations96
US6476431B1Nov 5, 2002

Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same

NEC CORP43 citations92
US6440822B1Aug 27, 2002

Method of manufacturing semiconductor device with sidewall metal layers

NEC CORP19 citations92
US6441391B1Aug 27, 2002

Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate

NEC CORP52 citations92
US6180968B1Jan 30, 2001

Compound semiconductor device and method of manufacturing the same

NEC CORP26 citations92
US5949096ASep 7, 1999

Field effect transistor with stabilized threshold voltage

NEC CORP24 citations92
US6121641ASep 19, 2000

Compound semiconductor field-effect transistor with improved current flow characteristic

NEC CORP15 citations74
US4831422AMay 16, 1989

Field effect transistor

NEC CORP12 citations74
US6278144B1Aug 21, 2001

Field-effect transistor and method for manufacturing the field effect transistor

NEC CORP6 citations63
US6075263AJun 13, 2000

Method of evaluating the surface state and the interface trap of a semiconductor

NEC CORP5 citations63
US5891757AApr 6, 1999

Method for forming a field-effect transistor having difference in capacitance between source and drain with respect to shield layer

NEC CORP5 citations63
US5389802AFeb 14, 1995

Heterojunction field effect transistor (HJFET) having an improved frequency characteristic

NEC CORP5 citations63
US5619146AApr 8, 1997

Switching speed fluctuation detecting apparatus for logic circuit arrangement

NEC CORP2 citations62

MINEBEA CO LTD

11 patents

LASER SYSTEMS INC

4 patents

OHNO YASUO

4 patents

TAKEDA CHEMICAL INDUSTRIES LTD

2 patents

TOHOKU MIKUNI KOGYO CO LTD

1 patent

OKI ELECTRIC IND CO LTD

1 patent