Inventor

YOON EUNGJUNG

KR2 patents

Patents

2 patents

US7374986B2May 20, 2008

Method of fabricating field effect transistor (FET) having wire channels

SAMSUNG ELECTRONICS CO LTD107 citations96

US7274051B2Sep 25, 2007

Field effect transistor (FET) having wire channels and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD51 citations91