Inventor
LEE HENG-YUAN
TW22 patents
⚠️ This page may combine multiple inventors who share the name “LEE HENG-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IND TECH RES INST
16 patentsUS7405166B2Jul 29, 2008
Method of manufacturing charge storage device
IND TECH RES INST550 citations97
US11625588B2Apr 11, 2023
Neuron circuit and artificial neural network chip
IND TECH RES INST8 citations85
US11017830B1May 25, 2021
Ferroelectric memories
IND TECH RES INST12 citations82
US10074533B1Sep 11, 2018
Structure of epitaxial wafer and method of fabricating the same
IND TECH RES INST4 citations68
US11145356B2Oct 12, 2021
Computation operator in memory and operation method thereof
IND TECH RES INST1 citations61
US9373789B2Jun 21, 2016
Resistive random access memory and method for fabricating the same
IND TECH RES INST1 citations61
US9142776B2Sep 22, 2015
Resistive random access memory and method for fabricating the same
IND TECH RES INST3 citations61
US7851843B2Dec 14, 2010
DRAM cylindrical capacitor
IND TECH RES INST3 citations61
US7799653B2Sep 21, 2010
Method for forming capacitor in dynamic random access memory
IND TECH RES INST3 citations61
US7332393B2Feb 19, 2008
Method of fabricating a cylindrical capacitor
IND TECH RES INST3 citations61
US11217661B2Jan 4, 2022
Ferroelectric memories
IND TECH RES INST0 citations59
US10833091B2Nov 10, 2020
Ferroelectric memories
IND TECH RES INST1 citations59
US7456065B2Nov 25, 2008
Fabricating method of DRAM cylindrical capacitor
IND TECH RES INST1 citations51
US10014375B1Jul 3, 2018
III-nitride based semiconductor structure
IND TECH RES INST1 citations49
US9385314B2Jul 5, 2016
Memory cell of resistive random access memory and manufacturing method thereof
IND TECH RES INST1 citations49
US10170580B2Jan 1, 2019
Structure of GaN-based transistor and method of fabricating the same
IND TECH RES INST0 citations35