P

Inventor

TOKUYAMA SHINJI

JP27 patents
⚠️ This page may combine multiple inventors who share the name “TOKUYAMA SHINJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DAICEL CHEM

9 patents
US6905861B2Jun 14, 2005

D-aminoacylases, method for producing the same, and method for producing D-amino acids using the same

DAICEL CHEM9 citations73
US6514742B1Feb 4, 2003

D-aminoacylases, method for producing the same, and method for producing D-amino acids using the same

DAICEL CHEM6 citations73
US6030823AFeb 29, 2000

D-aminoacylase

DAICEL CHEM8 citations73
US5916774AJun 29, 1999

D-aminoacylase

DAICEL CHEM12 citations73
US6902915B2Jun 7, 2005

Heat-stable D-aminoacylase

DAICEL CHEM3 citations63
US6887697B2May 3, 2005

D-aminoacylase and gene encoding the same

DAICEL CHEM1 citations62
US6780619B2Aug 24, 2004

D-aminoacylase and gene encoding the same

DAICEL CHEM2 citations62
US6596528B2Jul 22, 2003

Heat-stable D-aminoacylase

DAICEL CHEM1 citations52
US6664083B2Dec 16, 2003

Methods for racemizing N-acylamino acids and producing optically active amino acids

DAICEL CHEM0 citations42

YOSHIZUMI YUSUKE

7 patents
US8546163B2Oct 1, 2013

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

YOSHIZUMI YUSUKE6 citations84
US8306082B2Nov 6, 2012

Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device

YOSHIZUMI YUSUKE12 citations84
US8227277B2Jul 24, 2012

Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device

YOSHIZUMI YUSUKE15 citations84
US8741674B2Jun 3, 2014

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

YOSHIZUMI YUSUKE6 citations73
US8507305B2Aug 13, 2013

Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate

YOSHIZUMI YUSUKE4 citations62
US8693515B2Apr 8, 2014

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

YOSHIZUMI YUSUKE0 citations52
US8541253B2Sep 24, 2013

III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device

YOSHIZUMI YUSUKE0 citations42

SUMITOMO ELECTRIC INDUSTRIES

3 patents
US7933303B2Apr 26, 2011

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

SUMITOMO ELECTRIC INDUSTRIES30 citations92
US9425348B2Aug 23, 2016

Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations51
US8357558B2Jan 22, 2013

Method of making semiconductor light-emitting device

SUMITOMO ELECTRIC INDUSTRIES0 citations42

ADACHI MASAHIRO

2 patents
US8581296B2Nov 12, 2013

Compound semiconductor device

ADACHI MASAHIRO1 citations47
US8917750B2Dec 23, 2014

III-nitride semiconductor laser diode

ADACHI MASAHIRO0 citations37

TOKUYAMA SHINJI

2 patents
US8227898B2Jul 24, 2012

Ohmic contact on a p-type principal surface tilting with respect to the c-plane

TOKUYAMA SHINJI0 citations47
US8415707B2Apr 9, 2013

Group III nitride semiconductor device

TOKUYAMA SHINJI0 citations36

UENO MASAKI

1 patent
US8927962B2Jan 6, 2015

Group III nitride semiconductor optical device

UENO MASAKI4 citations73

KYONO TAKASHI

1 patent
US8803274B2Aug 12, 2014

Nitride-based semiconductor light-emitting element

KYONO TAKASHI3 citations62

RITSUMEIKAN TRUST

1 patent
US8980586B2Mar 17, 2015

Compound and method for producing same

RITSUMEIKAN TRUST0 citations51

AKITA KATSUSHI

1 patent
US8619828B2Dec 31, 2013

Group III nitride semiconductor laser diode

AKITA KATSUSHI0 citations41