Inventor

AKITA KATSUSHI

JP90 patents

⚠️ This page may combine multiple inventors who share the name “AKITA KATSUSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AKITA KATSUSHI

SUMITOMO ELECTRIC INDUSTRIES

Group-III nitride light-emitting device

Method of fabricating nitride semiconductor laser

Semiconductor device having quantum well structure, and method of forming the same

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

GaN substrate, substrate with epitaxial layer, semiconductor device, and method of manufacturing GaN substrate

Light emitting device

Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

Light generating semiconductor device and method of making the same

Gallium-nitride deposition substrate, method of manufacturing gallium-nitride deposition substrate, and method of manufacturing gallium nitride substrate

Semiconductor light generating device

Semiconductor device

Group III nitride semiconductor device and epitaxial substrate

Light-emitting device and manufacturing method thereof

Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device

Light generating semiconductor device and method of making the same

Semiconductor light generating device

Semiconductor element and method for producing the same

Light emitting apparatus

Epitaxial wafer having a gallium nitride epitaxial layer deposited on semiconductor substrate and method for preparing the same

Epitaxial wafer and method for manufacturing same

Semiconductor device

Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device

Method of fabricating nitride-based semiconductor optical device

Nitride semiconductor light emitting device and method for forming the same

Group III nitride semiconductor laser

Semiconductor light-emitting element and substrate used in formation of the same

Nitride semiconductor light-emitting device

Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device

Semiconductor light-emitting device and method of manufacturing semiconductor light-emitting device

Gallium arsenide crystal body and gallium arsenide crystal substrate

YOSHIZUMI YUSUKE

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device

III-nitride semiconductor optical device and epitaxial substrate

Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device

KYONO TAKASHI

Nitride semiconductor light-emitting element

Nitride-based semiconductor light-emitting element

Nitride semiconductor light emitting device

Group III nitride semiconductor device and epitaxial substrate

HASHIMOTO SHIN

Method for forming epitaxial wafer and method for fabricating semiconductor device

Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer

Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device

ENYA YOHEI

Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode

GaN-based semiconductor light emitting device and the method for making the same

Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device

KASAI HITOSHI

Substrate having thin film of GaN joined thereon and method of fabricating the same, and a GaN-based semiconductor device and method of fabricating the same

UENO MASAKI

Group III nitride semiconductor optical device

MORI HIROKI

Semiconductor wafer, light-receiving element, light-receiving element array, hybrid-type detection device, optical sensor device, and process for production of semiconductor wafer

HIRAYAMA HIDEKI

Method of manufacturing a light-emitting device

FUJII KEI

Semiconductor device, optical sensor device and semiconductor device manufacturing method