Inventor
UOZUMI YOSHIHIRO
US29 patents
⚠️ This page may combine multiple inventors who share the name “UOZUMI YOSHIHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
20 patentsUS6261953B1Jul 17, 2001
Method of forming a copper oxide film to etch a copper surface evenly
TOSHIBA KK96 citations98
US6475909B2Nov 5, 2002
Method of fabricating metal wiring on a semiconductor substrate using ammonia-containing plating and etching solutions
TOSHIBA KK41 citations96
US6492271B1Dec 10, 2002
Semiconductor device and method of manufacturing the same
TOSHIBA KK27 citations92
US6459111B1Oct 1, 2002
Semiconductor device and method for manufacturing the same
TOSHIBA KK15 citations92
US8946809B2Feb 3, 2015
Method for manufacturing semiconductor memory device and semiconductor memory device
TOSHIBA KK11 citations83
US7183203B2Feb 27, 2007
Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutions
TOSHIBA KK5 citations73
US6818556B2Nov 16, 2004
Method of plating a metal or metal compound on a semiconductor substrate that includes using the same main component in both plating and etching solutions
TOSHIBA KK6 citations73
US7022580B2Apr 4, 2006
Semiconductor device and method for manufacturing the same
TOSHIBA KK2 citations63
US9099474B2Aug 4, 2015
Self-aligned silicide formation on source/drain through contact via
TOSHIBA KK2 citations62
US8349718B2Jan 8, 2013
Self-aligned silicide formation on source/drain through contact via
TOSHIBA KK3 citations62
US7345352B2Mar 18, 2008
Insulating tube, semiconductor device employing the tube, and method of manufacturing the same
TOSHIBA KK3 citations60
US6995472B2Feb 7, 2006
Insulating tube
TOSHIBA KK1 citations60
US7884027B2Feb 8, 2011
Method of manufacturing semiconductor device
TOSHIBA KK5 citations57
US9553189B2Jan 24, 2017
Self-aligned silicide formation on source/drain through contact via
TOSHIBA KK0 citations52
US7405133B2Jul 29, 2008
Semiconductor device and method for manufacturing the same
TOSHIBA KK0 citations52
US8912089B2Dec 16, 2014
Method for manufacturing a semiconductor device including a stacked body comprising pluralities of first and second metallic conductive layers
TOSHIBA KK1 citations51
US7850818B2Dec 14, 2010
Method of manufacturing semiconductor device and cleaning apparatus
TOSHIBA KK0 citations51
US7635601B2Dec 22, 2009
Method of manufacturing semiconductor device and cleaning apparatus
TOSHIBA KK1 citations51
US7282437B2Oct 16, 2007
Insulating tube, semiconductor device employing the tube, and method of manufacturing the same
TOSHIBA KK0 citations50
US7776754B2Aug 17, 2010
Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device
TOSHIBA KK0 citations40
UOZUMI YOSHIHIRO
3 patentsUS9213242B2Dec 15, 2015
Substrate processing method and substrate processing apparatus
UOZUMI YOSHIHIRO9 citations82
US8222160B2Jul 17, 2012
Metal containing sacrifice material and method of damascene wiring formation
UOZUMI YOSHIHIRO11 citations82
US8211800B2Jul 3, 2012
Ru cap metal post cleaning method and cleaning chemical
UOZUMI YOSHIHIRO7 citations82
KIOXIA CORP
3 patentsUS12068267B2Aug 20, 2024
Semiconductor device and method for manufacturing the same
KIOXIA CORP0 citations62
US11921428B2Mar 5, 2024
Substrate processing method and substrate processing apparatus
KIOXIA CORP0 citations62
US11621239B2Apr 4, 2023
Semiconductor device and method for manufacturing the same
KIOXIA CORP0 citations62