P

Inventor

BAN IBRAHIM

US33 patents
⚠️ This page may combine multiple inventors who share the name “BAN IBRAHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

24 patents
US7498211B2Mar 3, 2009

Independently controlled, double gate nanowire memory cell with self-aligned contacts

INTEL CORP50 citations96
US7560358B1Jul 14, 2009

Method of preparing active silicon regions for CMOS or other devices

INTEL CORP23 citations93
US10121792B2Nov 6, 2018

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP9 citations92
US9786667B2Oct 10, 2017

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP9 citations92
US9275999B2Mar 1, 2016

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP13 citations92
US10916547B2Feb 9, 2021

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP2 citations84
US10720434B2Jul 21, 2020

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP2 citations84
US10381350B2Aug 13, 2019

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP4 citations84
US9664858B2May 30, 2017

Optical photonic circuit coupling

INTEL CORP10 citations83
US7944003B2May 17, 2011

Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory

INTEL CORP7 citations81
US7646071B2Jan 12, 2010

Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory

INTEL CORP15 citations81
US7439588B2Oct 21, 2008

Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate

INTEL CORP5 citations74
US7112859B2Sep 26, 2006

Stepped tip junction with spacer layer

INTEL CORP7 citations74
US11557667B2Jan 17, 2023

Group III-nitride devices with improved RF performance and their methods of fabrication

INTEL CORP2 citations73
US11335777B2May 17, 2022

Integrated circuit components with substrate cavities

INTEL CORP2 citations73
US9618824B2Apr 11, 2017

Integrated Terahertz sensor

INTEL CORP4 citations72
US7859028B2Dec 28, 2010

Independently controlled, double gate nanowire memory cell with self-aligned contacts

INTEL CORP3 citations63
US11785759B2Oct 10, 2023

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP0 citations62
US11462540B2Oct 4, 2022

Floating body memory cell having gates favoring different conductivity type regions

INTEL CORP0 citations62
US7968392B2Jun 28, 2011

Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate

INTEL CORP0 citations52
US7575976B2Aug 18, 2009

Localized spacer for a multi-gate transistor

INTEL CORP0 citations52
US7414290B2Aug 19, 2008

Double gate transistor, method of manufacturing same, and system containing same

INTEL CORP1 citations52
US7138307B2Nov 21, 2006

Method to produce highly doped polysilicon thin films

INTEL CORP0 citations52
US7666796B2Feb 23, 2010

Substrate patterning for multi-gate transistors

INTEL CORP1 citations51

CHANG PETER L D

6 patents

KOBRINSKY MAURO J

1 patent

BAN IBRAHIM

1 patent

TSENG JIA-HUNG

1 patent