Inventor
BAN IBRAHIM
US33 patents
⚠️ This page may combine multiple inventors who share the name “BAN IBRAHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
24 patentsUS7498211B2Mar 3, 2009
Independently controlled, double gate nanowire memory cell with self-aligned contacts
INTEL CORP50 citations96
US7560358B1Jul 14, 2009
Method of preparing active silicon regions for CMOS or other devices
INTEL CORP23 citations93
US10121792B2Nov 6, 2018
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP9 citations92
US9786667B2Oct 10, 2017
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP9 citations92
US9275999B2Mar 1, 2016
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP13 citations92
US10916547B2Feb 9, 2021
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP2 citations84
US10720434B2Jul 21, 2020
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP2 citations84
US10381350B2Aug 13, 2019
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP4 citations84
US9664858B2May 30, 2017
Optical photonic circuit coupling
INTEL CORP10 citations83
US7944003B2May 17, 2011
Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
INTEL CORP7 citations81
US7646071B2Jan 12, 2010
Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
INTEL CORP15 citations81
US7439588B2Oct 21, 2008
Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate
INTEL CORP5 citations74
US7112859B2Sep 26, 2006
Stepped tip junction with spacer layer
INTEL CORP7 citations74
US11557667B2Jan 17, 2023
Group III-nitride devices with improved RF performance and their methods of fabrication
INTEL CORP2 citations73
US11335777B2May 17, 2022
Integrated circuit components with substrate cavities
INTEL CORP2 citations73
US9618824B2Apr 11, 2017
Integrated Terahertz sensor
INTEL CORP4 citations72
US7859028B2Dec 28, 2010
Independently controlled, double gate nanowire memory cell with self-aligned contacts
INTEL CORP3 citations63
US11785759B2Oct 10, 2023
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP0 citations62
US11462540B2Oct 4, 2022
Floating body memory cell having gates favoring different conductivity type regions
INTEL CORP0 citations62
US7968392B2Jun 28, 2011
Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate
INTEL CORP0 citations52
US7575976B2Aug 18, 2009
Localized spacer for a multi-gate transistor
INTEL CORP0 citations52
US7414290B2Aug 19, 2008
Double gate transistor, method of manufacturing same, and system containing same
INTEL CORP1 citations52
US7138307B2Nov 21, 2006
Method to produce highly doped polysilicon thin films
INTEL CORP0 citations52
US7666796B2Feb 23, 2010
Substrate patterning for multi-gate transistors
INTEL CORP1 citations51
CHANG PETER L D
6 patentsUS8217435B2Jul 10, 2012
Floating body memory cell having gates favoring different conductivity type regions
CHANG PETER L D44 citations98
US8980707B2Mar 17, 2015
Floating body memory cell having gates favoring different conductivity type regions
CHANG PETER L D19 citations96
US8569812B2Oct 29, 2013
Floating body memory cell having gates favoring different conductivity type regions
CHANG PETER L D25 citations96
US9646970B2May 9, 2017
Floating body memory cell having gates favoring different conductivity type regions
CHANG PETER L D9 citations92
US9520399B2Dec 13, 2016
Floating body memory cell having gates favoring different conductivity type regions
CHANG PETER L D11 citations92
US9418997B2Aug 16, 2016
Floating body memory cell having gates favoring different conductivity type regions
CHANG PETER L D11 citations92