Inventor
HSU FU SHIUNG
TW2 patents
Patents
2 patentsUS7064032B2Jun 20, 2006
Method for forming non-volatile memory cell with low-temperature-formed dielectric between word and bit lines, and non-volatile memory array including such memory cells
MACRONIX INT CO LTD3 citations58
US6869843B2Mar 22, 2005
Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming same
MACRONIX INT CO LTD2 citations57